Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. ...Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.展开更多
Detection of ultralow magnetic field requires magnetic sensors with high sensitivity and low noise level,especially for low operating frequency applications.We investigated the transport properties of tunnel magnetore...Detection of ultralow magnetic field requires magnetic sensors with high sensitivity and low noise level,especially for low operating frequency applications.We investigated the transport properties of tunnel magnetoresistance(TMR)sensors based on the double indirect exchange coupling effect.The TMR ratio of about 150%was obtained in the magnetic tunnel junctions and linear response to an in-plane magnetic field was successfully achieved.A high sensitivity of 1.85%/Oe was achieved due to a designed soft pinned sensing layer of CoFeB/NiFe/Ru/IrMn.Furthermore,the voltage output sensitivity and the noise level of 10.7 mV/V/Oe,10 nT/Hz^(1/2)at 1 Hz and3.3 nT/Hz^(1/2)at 10 Hz were achieved in Full Wheatstone Bridge configuration.This kind of magnetic sensors can be used in the field of smart grid for current detection and sensing.展开更多
基金supported by the State Key Project of Fundamental Research of Ministry of Science and Technology,China(Grant No.2010CB934400)the National Natural Science Foundation of China(Grant Nos.51229101 and 11374351)
文摘Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
基金Supported by the Framework Project of SGCC(Grant No.5700-202058381A-0-0-00)the National Key Research and Development Program of China(Grant No.2017YFA0206200)。
文摘Detection of ultralow magnetic field requires magnetic sensors with high sensitivity and low noise level,especially for low operating frequency applications.We investigated the transport properties of tunnel magnetoresistance(TMR)sensors based on the double indirect exchange coupling effect.The TMR ratio of about 150%was obtained in the magnetic tunnel junctions and linear response to an in-plane magnetic field was successfully achieved.A high sensitivity of 1.85%/Oe was achieved due to a designed soft pinned sensing layer of CoFeB/NiFe/Ru/IrMn.Furthermore,the voltage output sensitivity and the noise level of 10.7 mV/V/Oe,10 nT/Hz^(1/2)at 1 Hz and3.3 nT/Hz^(1/2)at 10 Hz were achieved in Full Wheatstone Bridge configuration.This kind of magnetic sensors can be used in the field of smart grid for current detection and sensing.
