Facing the growing data storage and computing demands, a high accessing speed memory with low power and non volatile character is urgently needed. Resistive access random memory with 4F^2 cell size, switching in sub-n...Facing the growing data storage and computing demands, a high accessing speed memory with low power and non volatile character is urgently needed. Resistive access random memory with 4F^2 cell size, switching in sub-nanosecond cycling endurances of over 10^(12) cycles, and information retention exceeding 10 years, is considered as promising nex generation non-volatile memory. However, the energy per bit is still too high to compete against static random acces memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder th further scaling down. The variation of resistance between different devices and even various cycles in the same device hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fin interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreove the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376093 and 61622401)the National Key Research and Development Program of China(Grant No.2016YFA0203900)
文摘Facing the growing data storage and computing demands, a high accessing speed memory with low power and non volatile character is urgently needed. Resistive access random memory with 4F^2 cell size, switching in sub-nanosecond cycling endurances of over 10^(12) cycles, and information retention exceeding 10 years, is considered as promising nex generation non-volatile memory. However, the energy per bit is still too high to compete against static random acces memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder th further scaling down. The variation of resistance between different devices and even various cycles in the same device hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fin interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreove the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.
