In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform ...In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared(FTIR) spectrometer,and atomic force microscope(AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 ?(theoretical value is 30.48 ?), the mismatch between the GaSb substrate and AlInAsSb achieves-162 arcsec,and the root-mean square(RMS) roughness for typical material growths has achieved around 1.6 ? over an area of 10 μm×10 μm. At room temperature, the photoluminescence(PL) spectrum shows a cutoff wavelength of 1.617 μm.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774130 11474248,61176127,61006085,61274013,and 61306013the Key Program for International Science and Technology Cooperation Projects of China(Grant No.2011DFA62380)the Ph.D. Programs Foundation of the Ministry of Education of China(Grant No.20105303120002)
文摘In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared(FTIR) spectrometer,and atomic force microscope(AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 ?(theoretical value is 30.48 ?), the mismatch between the GaSb substrate and AlInAsSb achieves-162 arcsec,and the root-mean square(RMS) roughness for typical material growths has achieved around 1.6 ? over an area of 10 μm×10 μm. At room temperature, the photoluminescence(PL) spectrum shows a cutoff wavelength of 1.617 μm.
