热电器件的界面稳定性是决定其服役可靠性和寿命的关键因素。对于方钴矿热电器件,为了抑制高温电极与方钴矿材料之间的相互扩散,需要在两者之间加入阻挡层。本工作选用Ti_(88)Al_(12)作为阻挡层,利用一步法热压烧结制备n型Yb_(0.3)Co_4S...热电器件的界面稳定性是决定其服役可靠性和寿命的关键因素。对于方钴矿热电器件,为了抑制高温电极与方钴矿材料之间的相互扩散,需要在两者之间加入阻挡层。本工作选用Ti_(88)Al_(12)作为阻挡层,利用一步法热压烧结制备n型Yb_(0.3)Co_4Sb_(12)/Ti_(88)Al_(12)/Yb_(0.3)Co_4Sb_(12)和p型CeFe3.85Mn0.15Sb12/Ti_(88)Al_(12)/CeFe3.85Mn0.15Sb12样品,研究Ti_(88)Al_(12)阻挡层与热电材料间的界面接触电阻率及微结构在加速老化实验中的演化规律。结果表明:在相同的老化条件下,n型样品的界面接触电阻率增加速度比p型样品慢,其激活能分别为84.1 k J/mol和68.8 k J/mol。对于n型样品,由元素扩散反应生成的金属间化合物中间层的增长及最终AlCo/TiCoSb层的开裂是导致界面接触电阻率增加的主要原因;而p型热电材料与Ti_(88)Al_(12)的热膨胀系数的差异加速了p型样品中界面裂纹的产生。展开更多
Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we sum...Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu2X (X=S,Se,Te)binary compounds as well as their multinary derivatives.These materials have the general features of two sublattices to decouple electron and phonon transport properties.On the one hand,the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity.On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance.For specific material systems,we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping,alloying,band engineering and nanostructure architecture,covering nearly all the material scale,are also presented.Finally,the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.展开更多
文摘热电器件的界面稳定性是决定其服役可靠性和寿命的关键因素。对于方钴矿热电器件,为了抑制高温电极与方钴矿材料之间的相互扩散,需要在两者之间加入阻挡层。本工作选用Ti_(88)Al_(12)作为阻挡层,利用一步法热压烧结制备n型Yb_(0.3)Co_4Sb_(12)/Ti_(88)Al_(12)/Yb_(0.3)Co_4Sb_(12)和p型CeFe3.85Mn0.15Sb12/Ti_(88)Al_(12)/CeFe3.85Mn0.15Sb12样品,研究Ti_(88)Al_(12)阻挡层与热电材料间的界面接触电阻率及微结构在加速老化实验中的演化规律。结果表明:在相同的老化条件下,n型样品的界面接触电阻率增加速度比p型样品慢,其激活能分别为84.1 k J/mol和68.8 k J/mol。对于n型样品,由元素扩散反应生成的金属间化合物中间层的增长及最终AlCo/TiCoSb层的开裂是导致界面接触电阻率增加的主要原因;而p型热电材料与Ti_(88)Al_(12)的热膨胀系数的差异加速了p型样品中界面裂纹的产生。
基金supported by the National Key Research and Development Program of China (2018YFB0703600)the National Natural Science Foundation of China (51625205)+3 种基金 the Key Research Program of Chinese Academy of Sciences (KFZD-SW-421)Program of Shanghai Subject Chief Scientist (16XD1403900)Youth Innovation Promotion Association, CAS (2016232)Shanghai Sailing Program (18YF1426700).
文摘Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu2X (X=S,Se,Te)binary compounds as well as their multinary derivatives.These materials have the general features of two sublattices to decouple electron and phonon transport properties.On the one hand,the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity.On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance.For specific material systems,we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping,alloying,band engineering and nanostructure architecture,covering nearly all the material scale,are also presented.Finally,the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.
