Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.

Magnetic Damping Properties of Single-Crystalline Co_(55)Mn_(18)Ga_(27) and Co_(50)Mn_(18)Ga_(32) Films

We investigate the structural,static magnetic and damping properties in two Mn-deficient magnetic Weyl semimetal Co-Mn-Ga(CMG) alloy films,i.e.,Co_(55)Mn_(18)Ga_(27)(CMG1) and Co_(50)Mn_(18)Ga_(32)(CMG2),which were epitaxially grown on MgO(001) substrates.CMG1 has a mixing phase of B2and L21,larger saturation magnetization(M_(s) ~760 emu/cm^(3)),stronger in-plane magnetic anisotropy.CMG2 has an almost pure B2phase,smaller M_(s)(~330 emu/cm^(3)),negligible in-plane magnetic anisotropy.Time-resolved magneto-optical Kerr effect results unambiguously demonstrate an obvious perpendicular standing spin wave(PSSW) mode in addition to the Kittel mode for both of the CMG films.The intrinsic damping constant is about 0.0055 and 0.015 for CMG1 and CMG2,respectively,which are both significantly larger than that of the stoichiometric CMG(i.e.,Co_(2)MnGa)film reported previously.In combination with the first-principles calculations,the intrinsic damping properties of the Mn-deficient CMG films can be well explained by considering the increase of density of states at the Fermi level,reduction of M_(s),and excitation of the PSSW mode.These findings provide a new clue to tuning the magnetic damping of the magnetic Weyl semimetal film through slight off-stoichiometry.

Giant anisotropy of magnetic damping and significant in-plane uniaxial magnetic anisotropy in amorphous Co40Fe40B20 films on GaAs(001)

Tuning magnetic damping constant in dedicated spintronic devices has important scientific and technological implications. Here we report on anisotropic damping in various compositional amorphous CoFeB films grown on GaAs(001) substrates. Measured by a vector network analyzer-ferromagnetic resonance (VNA-FMR) equipment, a giant magnetic damping anisotropy of 385%, i.e., the damping constant increases by about four times, is observed in a 10-nm-thick Co40Fe40B20 film when its magnetization rotates from easy axis to hard axis, accompanied by a large and pure in-plane uniaxial magnetic anisotropy (UMA) with its anisotropic field of about 450 Oe. The distinct damping anisotropy is mainly resulted from anisotropic two-magnon-scattering induced by the interface between the ferromagnetic layer and the substrate, which also generates a significant UMA in the film plane.

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]_(2)multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]_(2)multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.