The reaction 11B(p,α) 8Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF2. The experiment...The reaction 11B(p,α) 8Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF2. The experimental results indicate that the behaviour of boron is different from that of fluorine during silicide formation.展开更多
文摘The reaction 11B(p,α) 8Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF2. The experimental results indicate that the behaviour of boron is different from that of fluorine during silicide formation.