CdTe/ZnTe应变量子阱中的浅施主结合能

本文研究了介电常数失配对ＣｄＴｅ／ＺｎＴｅ应变量子阱中浅施主杂质结合能的影响．在有效质量近似下，利用变分方法计算了阱宽、杂质位置及应变对结合能的影响。

夸克质量对正负电子湮灭中单举过程的影响

在3种方案下考虑夸克质量改变对正负电子湮灭中双粲夸克对的单举过程的影响.第一种方案,选取固定长程矩阵元;第二种方案,采用线性势模型计算长程矩阵元;第三种方案,由实验抽取长程矩阵元.发现随夸克质量的减小,单举过程的截面有显著增大.

夸克质量对正负电子湮灭中单举过程和遍举过程的影响

在3种方案下考虑夸克质量改变对正负电子湮灭中双粲夸克对的单举过程和遍举产生的影响.第一种方案,选取固定长程矩阵元;第二种方案,采用线性势模型计算长程矩阵元;第三种方案,由实验抽取长程矩阵元.我们发现在第一种方案下,夸克质量改变对单举过程和遍举过程的产生截面都有显著影响.当夸克质量取1.0 GeV时,单举过程的领头阶计算可以与实验值符合得很好.但两者比值随夸克质量减小与实验值的偏差变大.在第二种方案和第三种方案下,随夸克质量的减小,虽然单举过程的截面有显著增大,但遍举过程的截面随夸克质量的减小而减小.

双光子过程中双J/Ψ产生的相对论修正

实验观测到J/Ψηc的产生截面是33fb,而在NRQCD框架下的理论计算只有5.5fb.为解决理论与实验的尖锐矛盾,考虑e+e-→2γ*→J/Ψ+J/Ψ过程的相对论修正,发现相对论修正使产生截面提高22%.

夸克质量对正负电子湮灭中遍举过程的影响

实验观测到遍举过程的产生截面比NRQCD框架下的理论计算值大一个数量级,为解决理论与实验的尖锐矛盾,本文在三种方案下考虑夸克质量改变对正负电子湮灭中双粲夸克对的遍举过程的影响.第一种方案,选取固定长程矩阵元;第二种方案,采用线性势模型计算长程矩阵元;第三种方案,由实验抽取长程矩阵元.发现在第一种方案下,夸克质量改变对遍举过程的产生截面有显著影响.在第二种方案和第三种方案下,遍举过程的截面随夸克质量的减小而减小.表明研究夸克质量对遍举过程的影响是有意义的.

DCIV技术表征MOS/SOI界面陷阱能级密度分布

基于直流电流电压(DCIV)理论和界面陷阱能级U型对称分布模型,可以获取硅界面陷阱在禁带中的分布,即利用沟道界面陷阱引起的界面复合电流与不同源/漏-体正偏电压(Vpn)的函数关系,求出对应每个Vpn的有效界面陷阱面密度(Neff),通过Neff函数与求出的每个Neff值作最小二乘拟合,将拟合参数代入界面陷阱能级密度(DIT)函数式,作出DIT的本征分布图。分别对部分耗尽的n MOS/SOI和p MOS/SOI器件进行测试,得到了预期的界面复合电流曲线,并给出了器件界面陷阱能级密度的U型分布图。结果表明,两种器件在禁带中央附近的陷阱能级密度量级均为109cm-2·e V-1,而远离禁带中央的陷阱能级密度量级为1011cm-2·e V-1。

DCIV技术提取SOI器件前栅界面与背界面态密度

直流电流电压(DCIV)方法不仅可以提取SOI器件前栅沟道界面态密度,也可应用于背界面态密度的提取.给出了具体的测试步骤与方法,以0.13μm SOI工艺制造的NMOS器件为测试对象,对前栅界面与背界面分别进行了测试.基于DCIV理论,将实验得到的界面复合电流值与理论公式做最小二乘拟合,不仅获得了各界面态密度,也得到界面态密度所在的等效能级.结果表明,采用了智能剥离技术制备的SOI NMOS器件背界面态密度量级为1010cm-2,前栅界面的态密度小于背界面的,量级为109cm-2,并给出了两界面态面密度所在的等效能级.

部分耗尽SOI器件背栅界面陷阱密度的提取

利用基于复合理论的直流电流电压法,提取SOI器件背栅界面陷阱密度。给出了具体的测试原理,以0.13μm SOI工艺制造的部分耗尽NMOS和PMOS器件为测试对象,分别对两种器件的背界面复合电流进行测试。将实验得到的界面复合电流值与理论公式作最小二乘拟合,不仅可以获得背界面陷阱密度,还可以得到界面陷阱密度所在的等效能级。结果表明,采用智能剥离技术制备的SOI器件的背界面陷阱密度量级均为1010cm-2,但NMOS器件的背界面陷阱密度略大于PMOS器件,并给出了界面陷阱密度所在的等效能级。

χ_c粒子轻强子及双光子衰变过程中长程矩阵元的研究

在NRQCD因子化框架下,通过χ_(c0)与χ_(c2)衰变过程对χ_c的长程矩阵元进行了研究.结果表明,相对论修正与领头阶矩阵元的大小关系满足NRQCD速度标度律.

绝热近似下在物质中三代中微子振荡几率

应用微子振荡的基本理论，推导出绝热近似下在物质中三代中微子的质量平方矩阵Ｍ２ 的本征值，物质中的中微子混合矩阵，物质中的中微子振荡几率．并用真空中的中微子混合矩阵Ｕ为Ｕ＝ ｅｘｐ（ｉΨλ７）Γｅｘｐ（ｉφλ５）ｅｘｐ（ｉωλ２） 的情况为例，说明中微子物质中振荡几率的解法．

在物质中长基线中微子振荡实验的非量子力学效应

研究了在物质中长基线中微子振荡实验的非量子力学效应，计算了非量子力学效应对中微子振荡几率和微子混合参数（ｓｉｎ２θ。

力学分析中矩形积分区域上球面积的解析解

在本文中 ,给出了方形积分区域上球面积的解析解 ,并在一极限条件下验证了该解析解的合理性 .

科学家之路

刘魁勇1971年生于沈阳。1990年入辽宁大学物理学院物理学专业学习，于1994年获理学学士学位。1994年就读于辽宁大学物理学院理论物理专业硕士研究生，1997年获理学硕士学位。1997年毕业留校任教至今，历任讲师，副教授，并于2007年破格晋升教授。

Amplitude analysis of the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)

Using e^(+)e^(−)annihilation data corresponding to an integrated luminosity of 2.93 fb^(−1)taken at the center-of-mass energy√s=3.773 GeV with the BESIII detector,a joint amplitude analysis is performed on the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η).The fit fractions of individual components are obtained,and large interferences among the dominant components of the decays D^(0)→a_(1)(1260)π,D^(0)→π(1300)π,D^(0)→ρ(770)ρ(770),and D^(0)→2(ππ)_(S)are observed in both channels.With the obtained amplitude model,the CP-even fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are determined to be(75.2±1.1_(stat).±1.5_(syst.))%and(68.9±1.5_(stat).±2.4_(syst.))%,respectively.The branching fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are measured to be(0.688±0.010_(stat.)±0.010_(syst.))%and(0.951±0.025_(stat.)±0.021_(syst.))%,respectively.The amplitude analysis provides an important model for the binning strategy in measuring the strong phase parameters of D^(0)→4πwhen used to determine the CKM angleγ(ϕ_(3))via the B^(−)→DK^(−)decay.

Determination of the number ofψ(3686)events taken at BESⅢ

The number ofψ(3686)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3±11.1)×10~6 by counting inclusiveψ(3686)hadronic events.The uncertainty is systematic and the statistical uncertainty is negligible.Meanwhile,the numbers ofψ(3686)events collected during the 2009 and 2012run periods are updated to be(107.7±0.6)×10~6 and(345.4±2.6)×10~6,respectively.Both numbers are consistent with the previous measurements within one standard deviation.The total number ofψ(3686)events in the three data samples is(2712.4±14.3)×10~6.

Observation of e^(+)e^(-)→pppñπ-+c.c.

Using data taken at 29 center-of-mass energies between 4.16 and 4.70 GeV with the BESⅢdetector at the Beijing Electron Positron Collider corresponding to a total integrated luminosity of approximately 18.8 fb^(-1),the process e^(+)e^(-)→pppñπ+c.c.is observed for the first time with a statistical significance of 11.5σ.The average Born cross sections in the energy ranges of(4.160,4.380)GeV,(4.400,4.600)GeV and(4.610,4.700)GeV are measured to be(21.5±5.7±1.2)fb,(46.3±10.6±2.5)fb and(59.0±9.4±3.2)fb,respectively,where the first uncertainties are statistical and the second are systematic.The line shapes of the pñ and ppπ^(-)invariant mass spectra are consistent with phase space distributions,indicating that no hexaquark or di-baryon state is observed.

Search for hidden-charm tetraquark with strangeness in e^(+)e^(−)→K^(+)D_(s)^(∗−) D^(∗0 )+ c.c.

We report a search for a heavier partner of the recently observed Z_(cs)(3985)^(-) state,denoted as Z_(cs)^('-),in the process e^(+)e^(−)→K^(+)D_(s)^(∗−) D^(∗0 )+ c.c.,based on e^(*)e^(-)collision data collected at the center-of-mass energies of √s=4.661,4.682 and 4.699 GeV with the BESIII detector.The Z_(cs)^('-) is of interest as it is expected to be a candidate for a hidden-charm and open-strange tetraquark.A partial-reconstruction technique is used to isolate K^(+)recoil-mass spectra,which are probed for a potential contribution from Z_(cs)^('-)→D_(s)^(∗−) D^(∗0 )+ c.c.We find an excess of Z_(cs)^('-)→D_(s)^(*-)-D^(*0)(c.c.)candidates with a significance of 2.1o,after considering systematic uncertainties,at a mass of(4123.5±0.7_(sat)±4.7_(syst.))MeV/c^(2).As the data set is limited in size,the upper limits are evaluated at the 90%confidence level on the product of the Born cross sections(σ^(Borm))and the branching fraction(B)of Z_(cs)^('-)→D_(s)^(*-)-D^(*0),under different assumptions of the Z_(cs)^('-) mass from 4.120 to 4.140 MeV and of the width from 10 to 50 MeV at the three center-of-mass energies.The upper limits of σ^(Born).B are found to be at the level of O(1)pb at each energy.Larger data samples are needed to confirm the Z_(cs)^('-) state and clarify its nature in the coming years.

Search for the weak decayψ(3686)→■+c.c.

Using(448.1±2.9)×10^(6)ψ(3686)for the weak baryonic decayψ(3686)→Λc+∑-+c.c..The analysis procedure is optimized using a blinded method.No significant signal is observed,and the upper limit on the branching fraction(B)ofψ(3686)→Λc+∑-+c.c.is set as 1.4×10^(-5)at the 90%confidence level.

Observations of the Cabibbo-Suppressed decays Λ_(c)^(+)→nπ+π^(0),nπ^(+)π^(-)π^(+) and the Cabibbo-Favored decay Λ_(c)^(+)→nK^(-)π^(+)π^(+)

Using electron-positron annihilation data samples corresponding to an integrated luminosity of 4.5 fb-1,collected by the BESⅢdetector in the energy region between 4599.53 MeV and 4698.82 MeV,we report the first observations of the Cabibbo-suppressed decaysΛ_(c)^(+)→nπ^(+)π^(0),Λ_(c)^(+)→nπ^(+)π^(-)π^(+),and the Cabibbo-favored decayΛ_(c)^(+)→nK^(-)π^(+)π^(+)with statistical significances of 7.9σ,7.8σ,and>10σ,respectively.The branching fractions of these decays are measured to be B(Λ_(c)^(+)→nπ^(+)π^(0))=(0.64±0.09±0.02)%,B(Λ_(c)^(+)→nπ^(+)π^(-)π^(+))=(0.45±0.07±0.03)%,and B(Λ_(c)^(+)→nK^(-)π^(+)π^(+))=(1.90±0.08±0.09)%,where the first uncertainties are statistical and the second are systematic.We find that the branching fraction of the decayΛ_(c)^(+)→nπ^(+)π^(0)is about one order of magnitude higher than that ofΛ_(c)^(+)→nπ^(+).

Measurements of the center-of-mass energies at BESⅢ via the di-muon process

From 2011 to 2014, the BESIII experiment collected about 5 fb^-1 data at center-of-mass energies around 4 GeV for the studies of the charmonium-like and higher excited charmonium states. By analyzing the di-muon process e＋e- →yma/Fsμ^＋μ^-, the center-of-mass energies of the data samples are measured with a precision of 0.8 MeV. The center-of-mass energy is found to be stable for most of the time during data taking.