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Ti掺杂W_(18)O_(49)纳米线的电子结构与NO_2敏感性能的第一性原理研究 被引量:4
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作者 秦玉香 刘梅 化得燕 《物理学报》 SCIE EI CAS CSCD 北大核心 2014年第20期273-280,共8页
采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,通过理论建模,研究了Ti掺杂的非化学计量比W18O49纳米线的几何与能带结构以及电子态密度,并通过进一步计算NO2/Ti-W18O49纳米线吸附体系的吸附能、电荷差分密度与电荷布居,... 采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,通过理论建模,研究了Ti掺杂的非化学计量比W18O49纳米线的几何与能带结构以及电子态密度,并通过进一步计算NO2/Ti-W18O49纳米线吸附体系的吸附能、电荷差分密度与电荷布居,分析了Ti掺杂W18O49纳米线的气体吸附与敏感性能.计算发现,Ti掺杂改变了W18O49纳米线的表面电子结构,引入的额外的杂质态密度和费米能级附近能带结构的显著变化,使掺杂纳米线带隙与费米能级位置改变,纳米线导电性能增强.吸附在W18O49纳米线表面的NO2作为电子受体从纳米线导带夺取电子,导致纳米线电导降低,产生气体敏感响应.与纯相W18O49纳米线相比,NO2/Ti-W18O49纳米线吸附体系内部存在更多的电子转移,从理论上定量地反映了Ti掺杂对改善W18O49纳米线气敏灵敏度的有效性.对Ti掺杂纳米线不同气体吸附体系电子布居的进一步计算表明,Ti掺杂纳米线对NO2气体具有良好的灵敏度和选择性. 展开更多
关键词 密度泛函计算 Ti掺杂 W18O49纳米线 气敏
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First principles study on the surface- and orientation-dependent electronic structure of a WO_3 nanowire
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作者 秦玉香 化得燕 李晓 《Journal of Semiconductors》 EI CAS CSCD 2013年第6期5-10,共6页
The effects of the surface and orientation of a WOnanowire on the electronic structure are investigated by using first principles calculation based on density functional theory(DFT).The surface of the WO3 nanowire was... The effects of the surface and orientation of a WOnanowire on the electronic structure are investigated by using first principles calculation based on density functional theory(DFT).The surface of the WO3 nanowire was terminated by a bare or hydrogenated oxygen monolayer or bare WOplane,and the[010]- and[001]-oriented nanowires with different sizes were introduced into the theoretical calculation to further study the dependence of electronic band structure on the wire size and orientation.The calculated results reveal that the surface structure, wire size and orientation have significant effects on the electronic band structure,bandgap,and density of states (DOS) of the WOnanowire.The optimized WOnanowire with different surface structures showed a markedly dissimilar band structure due to the different electronic states near the Fermi level,and the O-terminated[001] WOnanowire with hydrogenation can exhibit a reasonable indirect bandgap of 2.340 eV due to the quantum confinement effect,which is 0.257 eV wider than bulk WO.Besides,the bandgap change is also related to the orientation-resulted surface reconstructed structure as well as wire size. 展开更多
关键词 WO_3 nanowire density functional theory electronic band structure density of states
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