Breakdown voltage （Vbd） and charge to breakdown （Qbd） are two parameters often used to evaluate gate oxide reliability. In this paper,we investigate the effects of measurement methods on Vbd and Qbd of the gate ox...Breakdown voltage （Vbd） and charge to breakdown （Qbd） are two parameters often used to evaluate gate oxide reliability. In this paper,we investigate the effects of measurement methods on Vbd and Qbd of the gate oxide of a 0.18μm dual gate CMOS process. Voltage ramps （V-ramp） and current ramps （J-ramp） are used to evaluate gate oxide reliability. The thin and thick gate oxides are all evaluated in the accumulation condition. Our experimental results show that the measurement methods affect Vbd only slightly but affect Qbd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods. From the I-t curve,it can be seen that Qbd obtained using a J-ramp is much bigger than that with a V-ramp. At the same time, the Weibull slopes of Qbd are definitely smaller than those of Vbd. This means that Vbd is more reliable than Qbd, Thus we should be careful to use Qbd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.展开更多
《义务教育英语课程标准(2022年版)》指出,教师要强化素养立意,围绕单元主题,充分挖掘育人价值。本文将以PEP《英语》六年级下册Unit 1 How tall are you?Part C Story time为例,提出单元主题引领下开展故事教学的实施策略,探索引导学...《义务教育英语课程标准(2022年版)》指出,教师要强化素养立意,围绕单元主题,充分挖掘育人价值。本文将以PEP《英语》六年级下册Unit 1 How tall are you?Part C Story time为例,提出单元主题引领下开展故事教学的实施策略,探索引导学生开展单元主题意义探究的有效路径,促进学生核心素养的发展。展开更多
文摘Breakdown voltage （Vbd） and charge to breakdown （Qbd） are two parameters often used to evaluate gate oxide reliability. In this paper,we investigate the effects of measurement methods on Vbd and Qbd of the gate oxide of a 0.18μm dual gate CMOS process. Voltage ramps （V-ramp） and current ramps （J-ramp） are used to evaluate gate oxide reliability. The thin and thick gate oxides are all evaluated in the accumulation condition. Our experimental results show that the measurement methods affect Vbd only slightly but affect Qbd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods. From the I-t curve,it can be seen that Qbd obtained using a J-ramp is much bigger than that with a V-ramp. At the same time, the Weibull slopes of Qbd are definitely smaller than those of Vbd. This means that Vbd is more reliable than Qbd, Thus we should be careful to use Qbd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.
文摘《义务教育英语课程标准(2022年版)》指出,教师要强化素养立意,围绕单元主题,充分挖掘育人价值。本文将以PEP《英语》六年级下册Unit 1 How tall are you?Part C Story time为例,提出单元主题引领下开展故事教学的实施策略,探索引导学生开展单元主题意义探究的有效路径,促进学生核心素养的发展。
