Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability...Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.展开更多
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as a...Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modem IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states （DOS）, and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.展开更多
A series of rare earth bulks with the ultrafine nanocrystalline structure were prepared by applying an 'oxygen-free'(an environmental oxygen concentration less than 0.5 ppm) in-situ synthesis system,where the ...A series of rare earth bulks with the ultrafine nanocrystalline structure were prepared by applying an 'oxygen-free'(an environmental oxygen concentration less than 0.5 ppm) in-situ synthesis system,where the inert-gas condensation was combined with the spark plasma sintering technology into an entirely closed system.The thermal and mechanical properties of the prepared ultrafine nanocrystalline bulks were characterized and compared with those of the raw polycrystalline bulks.It was found that the specific ...展开更多
随着三维集成阻变存储器(Resistive Random Access Memory,RRAM)集成度的不断提高,由焦耳热引起的热效应将会严重影响器件的稳定性、可靠性及寿命.因此,三维集成RRAM将面临最大的挑战是如何解决器件的热效应问题,而这种热效应现象伴随...随着三维集成阻变存储器(Resistive Random Access Memory,RRAM)集成度的不断提高,由焦耳热引起的热效应将会严重影响器件的稳定性、可靠性及寿命.因此,三维集成RRAM将面临最大的挑战是如何解决器件的热效应问题,而这种热效应现象伴随着器件特征尺寸的下降,热量分布对于RRAM器件的影响(如能耗、热稳定性等)变得尤为突出.特别是随着存储单元密度的不断提升,相邻单元之间的距离不断减小,邻近单元的热串扰将严重制约三维集成RRAM的发展和应用.本文基于电-热类比方法,建立了一种新的三维集成阻变存储器阵列的电-热紧凑模型;模型的准确性通过ANSYS物理场仿真软件进行了验证.该模型能够在Cadence中同时进行阵列电学特性和热学特性的仿真;本文提出的紧凑模型可以用于预测三维集成RRAM阵列中的热分布状况及分析热串扰.展开更多
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901)the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091)+1 种基金Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008)the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)
文摘Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,the National Natural Science Foundation of China(Grant No.61574166)the National Basic Research Program of China(Grant No.2013CBA01604)+1 种基金the National Key Research and Development Program of China(Grant No.2016YFA0201802)and the Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008)
文摘Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modem IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states （DOS）, and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.
基金supported by the National Natural Science Foundation of China (50871001)the Program for New Century Excellent Talents in University (NCET 2006-06-0182)the Doctorate Foundation of Chinese Ministry of Education (20070005010)
文摘A series of rare earth bulks with the ultrafine nanocrystalline structure were prepared by applying an 'oxygen-free'(an environmental oxygen concentration less than 0.5 ppm) in-situ synthesis system,where the inert-gas condensation was combined with the spark plasma sintering technology into an entirely closed system.The thermal and mechanical properties of the prepared ultrafine nanocrystalline bulks were characterized and compared with those of the raw polycrystalline bulks.It was found that the specific ...
文摘随着三维集成阻变存储器(Resistive Random Access Memory,RRAM)集成度的不断提高,由焦耳热引起的热效应将会严重影响器件的稳定性、可靠性及寿命.因此,三维集成RRAM将面临最大的挑战是如何解决器件的热效应问题,而这种热效应现象伴随着器件特征尺寸的下降,热量分布对于RRAM器件的影响(如能耗、热稳定性等)变得尤为突出.特别是随着存储单元密度的不断提升,相邻单元之间的距离不断减小,邻近单元的热串扰将严重制约三维集成RRAM的发展和应用.本文基于电-热类比方法,建立了一种新的三维集成阻变存储器阵列的电-热紧凑模型;模型的准确性通过ANSYS物理场仿真软件进行了验证.该模型能够在Cadence中同时进行阵列电学特性和热学特性的仿真;本文提出的紧凑模型可以用于预测三维集成RRAM阵列中的热分布状况及分析热串扰.
