Diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon(100)substrates from methane/hydrogen gas mixture,and characterized with atomic force microscopy The results show that most...Diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon(100)substrates from methane/hydrogen gas mixture,and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the(100)planes parallel to the silicon substrate.Layer structures are found in the film,indicating a combination of layer-by-layer and island growth.Raman spectrum and x-ray diffraction also confirm the present results.展开更多
Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to...Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.展开更多
基金supported by the National Natural Science Foundation of China(20827002,20911130229)National Key Basic Research Program of China(973)(2009CB929403,2011CB808702)~~
基金Supported by State Education Committee of China,and Chinese Academy of Sciences。
文摘Diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon(100)substrates from methane/hydrogen gas mixture,and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the(100)planes parallel to the silicon substrate.Layer structures are found in the film,indicating a combination of layer-by-layer and island growth.Raman spectrum and x-ray diffraction also confirm the present results.
文摘Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.
