Two-dimensional(2D)heterostructures based on layered transition metal dichalcogenides(TMDs)have attracted increasing attention for the applications of the nextgeneration high-performance integrated electronics and opt...Two-dimensional(2D)heterostructures based on layered transition metal dichalcogenides(TMDs)have attracted increasing attention for the applications of the nextgeneration high-performance integrated electronics and optoelectronics.Although various TMD heterostructures have been successfully fabricated,epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging.In addition,photodetectors based on such heterostructures have seldom been studied.Here,we report the synthesis of high-quality vertical NbS2/MoS2metallic-semiconductor heterostructures.By using NbS2as the contact electrodes,the field-effect mobility and current on-off ratio of MoS2can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact,respectively.By using NbS2as contact,the photodetector performance of MoS2is much improved with higher responsivity and less response time.Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.展开更多
基金financially supported by the National Key R&D Program of China(2018YFA0306900 and 2018YFA0305800)the National Natural Science Foundation of China(51872012)。
文摘Two-dimensional(2D)heterostructures based on layered transition metal dichalcogenides(TMDs)have attracted increasing attention for the applications of the nextgeneration high-performance integrated electronics and optoelectronics.Although various TMD heterostructures have been successfully fabricated,epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging.In addition,photodetectors based on such heterostructures have seldom been studied.Here,we report the synthesis of high-quality vertical NbS2/MoS2metallic-semiconductor heterostructures.By using NbS2as the contact electrodes,the field-effect mobility and current on-off ratio of MoS2can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact,respectively.By using NbS2as contact,the photodetector performance of MoS2is much improved with higher responsivity and less response time.Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.
