本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括Si/SiO_2-SiO_2/Si,Si-石英,GaAs-玻璃等的键合。利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试。文中还讨论了场助键合机理...本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括Si/SiO_2-SiO_2/Si,Si-石英,GaAs-玻璃等的键合。利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试。文中还讨论了场助键合机理、等离子体表面处理方法及场助键合材料的应用实例。展开更多
本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括SiO_2—SiO)2、Si-SiO_2、Si—石英、GaAS—玻璃等的键合.利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试,文中还讨论了场助键...本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括SiO_2—SiO)2、Si-SiO_2、Si—石英、GaAS—玻璃等的键合.利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试,文中还讨论了场助键合机理、等离子体表面处理方法及场助键合村料的应用实例.结果表明,场助键合技术是一种有很大潜力的技术.展开更多
The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been...The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been obtained.It is verified that for nor-mal stress when the GaAs samples are oriented in the 〈111〉 direction the maximumpiezoelectric effect occurs.As far as the piezoelectric properties and fabrication technologyare concerned,〈100〉 oriented GaAs substratcs are fit for the force sensors.展开更多
文摘本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括Si/SiO_2-SiO_2/Si,Si-石英,GaAs-玻璃等的键合。利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试。文中还讨论了场助键合机理、等离子体表面处理方法及场助键合材料的应用实例。
文摘本文报道了SOI(Semiconductor On Insulator)材料的场助键合技术,其中包括SiO_2—SiO)2、Si-SiO_2、Si—石英、GaAS—玻璃等的键合.利用各种检测手段对键合材料的键合面积、键合强度、界面形貌及电学特性进行了测试,文中还讨论了场助键合机理、等离子体表面处理方法及场助键合村料的应用实例.结果表明,场助键合技术是一种有很大潜力的技术.
文摘The origin of the piezoelectric effect of GaAs is discussed in some detail.TheGa atoms are negatively charged and As atoms positively charged.The piezoelectric con-stant tensors for arbitrarily oriented GaAs have been obtained.It is verified that for nor-mal stress when the GaAs samples are oriented in the 〈111〉 direction the maximumpiezoelectric effect occurs.As far as the piezoelectric properties and fabrication technologyare concerned,〈100〉 oriented GaAs substratcs are fit for the force sensors.
