We fabricate pentacene-based organic field effect transistors （OFETs） with Cu as source and drain （S-D） electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior...We fabricate pentacene-based organic field effect transistors （OFETs） with Cu as source and drain （S-D） electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0. 012 to 0.03 cm^2 V^-1 s^-1, and the threshold voltage downshifts from -14 to -9 V. The on/off current ratios are close to the order of 10^4. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.展开更多
We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer l...We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.展开更多
Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteri...Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60676051, the Natural Science Foundation of Tianjin under Grant No 07JCYBJC12700, and the Key Discipline of Material Physics and Chemistry of Tianjin.
文摘We fabricate pentacene-based organic field effect transistors （OFETs） with Cu as source and drain （S-D） electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0. 012 to 0.03 cm^2 V^-1 s^-1, and the threshold voltage downshifts from -14 to -9 V. The on/off current ratios are close to the order of 10^4. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.
基金Supported by the National Natural Science Foundation of China under Grant No 60676051, the Natural Science Foundation of Tianjin under Grant No 07JCYBJC12700, and the Key Discipline of Material Physics and Chemistry of Tianjin.
文摘We have fabricated organic Schottky barrier diodes with Cu/LiF/C60/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C60 is used as the organic layer and LiF as the buffer layer inserted between the cathode and C60. After the annealing process, Schottky contact is well formed at the Al/C60 interface and Ohmic contact is formed at the （Cu/LiF）/C60 interface. The current density-voltage （J-V） measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×03. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height ΦB, ideality factor n and reverse saturation current density Js are extracted according to the standard thermionic emission model.
基金supported by the National Natural Science Foundation of China (No.60676051)the Natural Science Foundation of Tianjin(No.07JCYBJC12700)the Fund of the Key Discipline of Material Physics and Chemistry of Tianjin
文摘Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.
