An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13μm CMOS technology.By using dual trench isolated structure in the memory cell,it is feasible t...An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13μm CMOS technology.By using dual trench isolated structure in the memory cell,it is feasible to employ a Si-diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond.A cross-point memory selector with a large on/off current ratio is demonstrated,the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state.A low SET programming current of 0.7mA is achieved and RESET/SET resistance difference of 10000×is obtained.展开更多
Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST...Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.展开更多
基金Supported by the National Basic Research Program of China(2010CB934300,2011CB309602,2011CB932800)the National Integrated Circuit Research Program of China(2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(60906004,60906003,61076121,61006087)the Science and Technology Council of Shanghai(1052nm07000).
文摘An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13μm CMOS technology.By using dual trench isolated structure in the memory cell,it is feasible to employ a Si-diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond.A cross-point memory selector with a large on/off current ratio is demonstrated,the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state.A low SET programming current of 0.7mA is achieved and RESET/SET resistance difference of 10000×is obtained.
基金Project supported by the National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB9328004)the National Integrated Circuit Research Program of China(No.2009ZX02023-003)+2 种基金the National Natural Science Foundation of China(Nos. 60906004,60906003,61006087,61076121,61176122,61106001)the Science and Technology Council of Shanghai(Nos.11DZ2261000,11OA1407800.12nm0503701)the Chinese Academy of Sciences(No.20110490761)
文摘Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.
