With use of electron-assisted chemical vapour deposition （EACVD） technology, nanocrystalline diamond films are successfully deposited on an α-SiC single phase ceramics substrate by means of reduction of the reactiv...With use of electron-assisted chemical vapour deposition （EACVD） technology, nanocrystalline diamond films are successfully deposited on an α-SiC single phase ceramics substrate by means of reduction of the reactive gas pressure. The structure and surface morphology of the deposited films are characterized by Raman spectroscopy, x-ray diffraction （XRD）, field emission scanning electron microscopy （FE-SEM） and atomic force microscopy （AFM）. The results examined by FE-SEM and AFM show that when the gas pressure was reduced to 0.5- 1 kPa, the surface grain size and surface roughness of the diamond film are decreased greatly to 18-32nm and 34-58nm respectively. The grain sizes estimated from full with at half maximum of （111） XRD peak by the Scherrer formula are 6-28 nm. However, too high secondary nucleation rate may result in pores and defects in the deposited films. Only at suitable gas pressure （1 kPa） to deposit films can we obtain densification and better quality nanocrystalline films.展开更多
By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are charac...By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2 A, sheet hole concentration can increase to a value greater than 1013 cm-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2 A and 6 A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.展开更多
The crystal structure of lead tungstate (PbWO4) can be regarded as ordered combination of the tungsten oxide tetrahedrons (WO4) and lead ions (Pb2+). According to the growth unit model, the growth units of lead tungst...The crystal structure of lead tungstate (PbWO4) can be regarded as ordered combination of the tungsten oxide tetrahedrons (WO4) and lead ions (Pb2+). According to the growth unit model, the growth units of lead tungstate are the aggregations of the tungsten oxide tetrahedrons and lead cations with various geometry configurations. It is suggested that the favorable growth units of lead tungstate crystal are pyramidal, tetragonal prism and quadrangular units corresponding to geometric orientations of the simple forms of the crystal. Under low restricted growth conditions, the growth form of lead tungstate crystallites is the aggregation of the geometric configurations of these favorable growth units. The above conclusions are completely confirmed by the experiment on hydrothermal preparation of lead tungstate crystallites.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60277024, the Nano-technology projects of Shanghai under Grant No 0452 nm051, the Shanghai Foundation of Applied Materials Research and Development under Grant No 0404, and the KeySubject Construction Project （Material Science） of Shanghai Educational Committee.
文摘With use of electron-assisted chemical vapour deposition （EACVD） technology, nanocrystalline diamond films are successfully deposited on an α-SiC single phase ceramics substrate by means of reduction of the reactive gas pressure. The structure and surface morphology of the deposited films are characterized by Raman spectroscopy, x-ray diffraction （XRD）, field emission scanning electron microscopy （FE-SEM） and atomic force microscopy （AFM）. The results examined by FE-SEM and AFM show that when the gas pressure was reduced to 0.5- 1 kPa, the surface grain size and surface roughness of the diamond film are decreased greatly to 18-32nm and 34-58nm respectively. The grain sizes estimated from full with at half maximum of （111） XRD peak by the Scherrer formula are 6-28 nm. However, too high secondary nucleation rate may result in pores and defects in the deposited films. Only at suitable gas pressure （1 kPa） to deposit films can we obtain densification and better quality nanocrystalline films.
基金Supported by the National Natural Science Foundation of China under Grant No 60577040, the Shanghai Foundation of Applied Materials Research and Development （0404）, the Nano-technology Project of Shanghai （0452nm051, 05nm05046）, and the Shanghai Leading Academic Disciplines （T0101）.
文摘By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2 A, sheet hole concentration can increase to a value greater than 1013 cm-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2 A and 6 A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.
文摘The crystal structure of lead tungstate (PbWO4) can be regarded as ordered combination of the tungsten oxide tetrahedrons (WO4) and lead ions (Pb2+). According to the growth unit model, the growth units of lead tungstate are the aggregations of the tungsten oxide tetrahedrons and lead cations with various geometry configurations. It is suggested that the favorable growth units of lead tungstate crystal are pyramidal, tetragonal prism and quadrangular units corresponding to geometric orientations of the simple forms of the crystal. Under low restricted growth conditions, the growth form of lead tungstate crystallites is the aggregation of the geometric configurations of these favorable growth units. The above conclusions are completely confirmed by the experiment on hydrothermal preparation of lead tungstate crystallites.
