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Fabrication and Characterization of Fe-Doped In2O3 Dilute Magnetic Semiconducting Nanowires
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作者 张军然 吴振尧 +7 位作者 刘玉杰 吕占朋 钮伟 王学锋 杜军 刘文卿 张荣 徐永兵 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第3期133-136,共4页
Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray ... Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model. 展开更多
关键词 Fe In Fabrication and Characterization of Fe-Doped In2O3 Dilute Magnetic Semiconducting Nanowires
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