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陶瓷凝胶再流动结合压滤制备高密度氧化铝素坯
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作者 吴晓浪 赵瑾 +3 位作者 岛井骏藏 毛小建 章健 王士维 《硅酸盐通报》 CAS 北大核心 2022年第7期2467-2473,共7页
高密度素坯是制备高性能陶瓷的基础,采用再流动结合压滤的方法制备高密度氧化铝素坯,研究了再流动结合压滤对素坯性能的影响。结果表明:脱水收缩1 d的再流动浆料具有更好的可压缩性,随着脱水收缩时间的延长,浆料的可压缩性降低;再流动... 高密度素坯是制备高性能陶瓷的基础,采用再流动结合压滤的方法制备高密度氧化铝素坯,研究了再流动结合压滤对素坯性能的影响。结果表明:脱水收缩1 d的再流动浆料具有更好的可压缩性,随着脱水收缩时间的延长,浆料的可压缩性降低;再流动结合压滤对高固含量浆料的物理力学性能提升效果更明显,与56.0%(体积分数)固含量的浆料直接压滤制备的素坯相比,通过再流动结合压滤制备的素坯相对密度从64.5%提高至65.7%,累积气孔率从0.149 mL/g降低至0.140 mL/g,素坯在1550℃下烧结2 h的烧结收缩率从13.2%降低至12.6%,在1500℃下烧结6 h制备的陶瓷抗弯强度从483 MPa提高至545 MPa。以上结果对大尺寸陶瓷部件制备具有重要意义。 展开更多
关键词 自发凝固成型 压滤 氧化铝 高固含量 高密度 低收缩率
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Wetting of molten Sn-3.5Ag-0.5Cu on Ni-P(-SiC) coatings deposited on high volume faction SiC/Al composite 被引量:5
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作者 Xiang-zhao ZHANG Xiao-lang WU +4 位作者 Gui-wu LIU Wen-qiang LUO Ya-jie GUO Hai-cheng SHAO Guan-jun QIAO 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2018年第9期1784-1792,共9页
The wetting of molten Sn-3.5Ag-0.5Cu alloy on the Ni-P(-SiC)coated SiCp/Al substrates was investigated by electroless Ni plating process,and the microstructures of the coating and the interfacial behavior of wetting s... The wetting of molten Sn-3.5Ag-0.5Cu alloy on the Ni-P(-SiC)coated SiCp/Al substrates was investigated by electroless Ni plating process,and the microstructures of the coating and the interfacial behavior of wetting systems were analyzed.The SiC particles are evenly distributed in the coating and enveloped with Ni.No reaction layer is observed at the coating/SiCp/Al composite interfaces.The contact angle increases from^19°with the Ni-P coating to 29°,43°and 113°with the corresponding Ni-P-3SiC,Ni-P-6SiC and Ni-P-9SiC coatings,respectively.An interaction layer containing Cu,Ni,Sn and P forms at the Sn-Ag-Cu/Ni-P-(0,3,6)SiC coated SiCp/Al interfaces,and the Cu-Ni-Sn and Ni-Sn-P phases are detected in the interaction layer.Moreover,the molten Sn-Ag-Cu can penetrate into the Ni-P(-SiC)coatings through the Ni-P/SiC interface and dissolve them to contact the SiCp/Al substrate. 展开更多
关键词 Ni coating Sn-Ag-Cu alloy SiCp/Al composite WETTING microstructures interface
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