Multiplexing technologies based on superconducting quantum interference devices(SQUIDs) are crucial to cryogenic readout of superconducting transition-edge sensor(TES) arrays. Demands for large-scale TES arrays promot...Multiplexing technologies based on superconducting quantum interference devices(SQUIDs) are crucial to cryogenic readout of superconducting transition-edge sensor(TES) arrays. Demands for large-scale TES arrays promote the development of multiplexing technologies towards large multiplexing factors and low readout noise. The development of multiplexing technologies also facilitates new applications of TES arrays in a wide range of frequencies. Here we summarize different types of SQUID-based multiplexing technologies including time-division multiplexing, code-division multiplexing, frequency-division multiplexing and microwave SQUID multiplexing. The advances and parameter constraints of each multiplexing technology are also discussed.展开更多
We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance ...We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.展开更多
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective ...We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.展开更多
Superconducting transition edge sensor(TES)bolometers require superconducting films to have controllable transition temperatures T_(c)in different practical applications.The value of T_(c)strongly affects thermal cond...Superconducting transition edge sensor(TES)bolometers require superconducting films to have controllable transition temperatures T_(c)in different practical applications.The value of T_(c)strongly affects thermal conductivity and thermal noise performance of TES detectors.Al films doped with Mn(Al-Mn)of different concentrations can accomplish tunable T_(c)A magnetron sputtering machine is used to deposit the Al-Mn films in this study.Fabrication parameters including sputtering pressure and annealing process are studied and their influences on T_(c)and superconducting transition widthΔT_(c)are optimized.The Al-Mn films withΔT_(c)below 1.0 mK for T_(c)in a range of 520 mK-580 mK are successfully fabricated.展开更多
基金Project supported by the National Science Foundation of China (Grant Nos. 11653001 and 11653004)。
文摘Multiplexing technologies based on superconducting quantum interference devices(SQUIDs) are crucial to cryogenic readout of superconducting transition-edge sensor(TES) arrays. Demands for large-scale TES arrays promote the development of multiplexing technologies towards large multiplexing factors and low readout noise. The development of multiplexing technologies also facilitates new applications of TES arrays in a wide range of frequencies. Here we summarize different types of SQUID-based multiplexing technologies including time-division multiplexing, code-division multiplexing, frequency-division multiplexing and microwave SQUID multiplexing. The advances and parameter constraints of each multiplexing technology are also discussed.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFA0200503)the National Natural Science Foundation of China(Grant No.61327813)
文摘We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0200503)
文摘We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.
基金the National Natural Science Foundation of China(Grant Nos.11653001 and 11653004)。
文摘Superconducting transition edge sensor(TES)bolometers require superconducting films to have controllable transition temperatures T_(c)in different practical applications.The value of T_(c)strongly affects thermal conductivity and thermal noise performance of TES detectors.Al films doped with Mn(Al-Mn)of different concentrations can accomplish tunable T_(c)A magnetron sputtering machine is used to deposit the Al-Mn films in this study.Fabrication parameters including sputtering pressure and annealing process are studied and their influences on T_(c)and superconducting transition widthΔT_(c)are optimized.The Al-Mn films withΔT_(c)below 1.0 mK for T_(c)in a range of 520 mK-580 mK are successfully fabricated.
