Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer （CSRL） are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence （PL）. PL measuremen...Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer （CSRL） are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence （PL）. PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3 ML GaAs/2 ML GaSh CSRL at room temperature. The full width at half maximum （FWHM） of the PL spectrum is about 20.2 meV （19.9 meV） at room temperature （2OK）, indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.展开更多
A series of GaAs1-ySby epilayers are grown on GaAs substrates under antimony compositions of samples with beryllium doping are obtained different growth conditions. Different A non-equilibrium thermodynamics model is ...A series of GaAs1-ySby epilayers are grown on GaAs substrates under antimony compositions of samples with beryllium doping are obtained different growth conditions. Different A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37 eV for the dissociation process of Sb4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction （HRXRD） rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.展开更多
文摘Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer （CSRL） are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence （PL）. PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3 ML GaAs/2 ML GaSh CSRL at room temperature. The full width at half maximum （FWHM） of the PL spectrum is about 20.2 meV （19.9 meV） at room temperature （2OK）, indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.
基金Supported by the National Natural Science Foundation of China under Grant No 50572120.
文摘A series of GaAs1-ySby epilayers are grown on GaAs substrates under antimony compositions of samples with beryllium doping are obtained different growth conditions. Different A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37 eV for the dissociation process of Sb4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction （HRXRD） rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.
