Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （...Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.展开更多
文摘Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.
