Ga As太阳电池是目前大部分航天器的主要动力来源,因此有必要对其在空间辐射环境条件下的性能衰减进行评估,以优化电池的辐射防护措施,保证电池在空间应用的高可靠和长寿命的要求。本文在Ga As太阳电池辐射损伤原理的基础上,分别研究了...Ga As太阳电池是目前大部分航天器的主要动力来源,因此有必要对其在空间辐射环境条件下的性能衰减进行评估,以优化电池的辐射防护措施,保证电池在空间应用的高可靠和长寿命的要求。本文在Ga As太阳电池辐射损伤原理的基础上,分别研究了等效注量衰减、非电离能损衰减和缺陷损伤三种评估方法的物理机制、建模思路和模型,并对三种方法进行了对比分析。展开更多
Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here w...Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875077,11975037,and 11921006)the National Grand Instrument Project of China(Grant Nos.2019YFF01014400 and 2019YFF01014404).
文摘Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.
