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Efficient terahertz generation from van der Waalsα-In_(2)Se_(3)
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作者 段诗婕 杨鸣 +9 位作者 周溯媛 张隆辉 韩锦森 孙旭 王广 刘昌勤 康冬冬 王小伟 陈家浩 戴佳钰 《Chinese Optics Letters》 SCIE EI CAS CSCD 2024年第1期141-146,共6页
Two-dimensional(2D)van der Waals materials have attracted tremendous attention due to their versatile physical properties and flexible manipulation approaches.Among the various types of van der Waals materials,α-In_(... Two-dimensional(2D)van der Waals materials have attracted tremendous attention due to their versatile physical properties and flexible manipulation approaches.Among the various types of van der Waals materials,α-In_(2)Se_(3)is remarkable for its intrinsic 2D ferroelectricity and high-performance opto-electronic properties.However,the study of theα-In_(2)Se_(3)system in terahertz(THz)radiation is scarce,although it is promising for electrically controlled THz field manipulation.We investigate theα-In_(2)Se_(3)in different thicknesses and report that the THz generation efficiency induced by femtosecond laser pulses can be largely improved by reducing the thickness from the bulk.Furthermore,we reveal the surge current in thin film coupled with THz emission exhibits a different Auger recombination mode,which is helpful in understanding the mechanism and provides insights into the design of 2D highly efficient THz devices. 展开更多
关键词 van der Waals TERAHERTZ carrier dynamics
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