We demonstrate a high-speed silicon carrier-depletion Michelson interferometric（MI）modulator with a low onchip insertion loss of 3 dB.The modulator features a compact size of 〈1 mm2 and a static high extinction rat...We demonstrate a high-speed silicon carrier-depletion Michelson interferometric（MI）modulator with a low onchip insertion loss of 3 dB.The modulator features a compact size of 〈1 mm2 and a static high extinction ratio of 〉30 dB.The Vπ·Lπ of the MI modulator is 0.95–1.26 V·cm under a reverse bias of -1 to-8 V,indicating a high modulation efficiency.Experimental results show that a 4-level pulse amplitude modulation up to 20 Gbaud is achieved with a bit error rate of 6×10-3,and a 30 Gb/s binary phase-shift-keying modulation is realized with an error vector magnitude of 25.8%.展开更多
基金supported in part by the National Natural Science Foundation of China(NSFC)under Grant Nos.61422508,61535006,and 61661130155
文摘We demonstrate a high-speed silicon carrier-depletion Michelson interferometric（MI）modulator with a low onchip insertion loss of 3 dB.The modulator features a compact size of 〈1 mm2 and a static high extinction ratio of 〉30 dB.The Vπ·Lπ of the MI modulator is 0.95–1.26 V·cm under a reverse bias of -1 to-8 V,indicating a high modulation efficiency.Experimental results show that a 4-level pulse amplitude modulation up to 20 Gbaud is achieved with a bit error rate of 6×10-3,and a 30 Gb/s binary phase-shift-keying modulation is realized with an error vector magnitude of 25.8%.
