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Dummy fill effect on CMP planarity
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作者 周隽雄 陈岚 +3 位作者 阮文彪 李志刚 沈伟翔 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期135-138,共4页
With the use of a chemical-mechanical polishing (CMP) simulator verified by testing data from a foundry, the effect of dummy fill characteristics, such as fill size, fill density and fill shape, on CMP planarity is ... With the use of a chemical-mechanical polishing (CMP) simulator verified by testing data from a foundry, the effect of dummy fill characteristics, such as fill size, fill density and fill shape, on CMP planarity is analyzed. The results indicate that dummy density has a significant impact on oxide erosion, and copper dishing is in proportion to dummy size. We also demonstrate that cross shape dummy fill can have the best dishing performance at the same density. 展开更多
关键词 chemical mechanical polishing dummy fill DISHING EROSION PLANARITY
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