采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜...采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。展开更多
采用磁控溅射法,先在镀钼的钠钙玻璃衬底上共溅射Cu、Sn金属层后,然后在顶部溅射一层Zn S,制备出Cu_2ZnSnS_4(CZTS)薄膜的预制层。对预制层进行低温合金,然后以硫粉作为硫源在石英管中进行高温硫化,得到表面平整但晶粒较小的CZTS薄膜。...采用磁控溅射法,先在镀钼的钠钙玻璃衬底上共溅射Cu、Sn金属层后,然后在顶部溅射一层Zn S,制备出Cu_2ZnSnS_4(CZTS)薄膜的预制层。对预制层进行低温合金,然后以硫粉作为硫源在石英管中进行高温硫化,得到表面平整但晶粒较小的CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用所得到的CZTS薄膜制备了太阳电池,其开路电压:Voc=442 m V,短路电流密度:Jsc=5.08 m A/cm^2,光电转换效率达到0.62%。展开更多
采用磁控溅射Zn-Cu-Sn-Cu金属预置层并后硒化的方法在镀钼玻璃衬底上制备了CZTSe薄膜。利用X射线衍射仪(XRD)、拉曼光谱测试仪(Raman)、扫描电子显微镜(SEM)、能谱仪(EDS)和热探针对所制备CZTSe薄膜的晶相结构、拉曼位移、表面形貌、化...采用磁控溅射Zn-Cu-Sn-Cu金属预置层并后硒化的方法在镀钼玻璃衬底上制备了CZTSe薄膜。利用X射线衍射仪(XRD)、拉曼光谱测试仪(Raman)、扫描电子显微镜(SEM)、能谱仪(EDS)和热探针对所制备CZTSe薄膜的晶相结构、拉曼位移、表面形貌、化学组分和导电类型进行表征分析,分析结果表明:所制备CZTSe薄膜结晶质量好、无二次相、晶粒均匀致密、化学组分是贫铜富锌的,且导电类型为p型,符合高效率太阳电池吸收层的要求。将CZTSe吸收层制备成有效面积为0.35 cm2的Mo/CZTSe/Cd S/i-ZnO/Zn O:Al/Ni-Al电池,其效率为1.17%,开路电压为419 m V,短路电流密度为10.21 m A/cm^2,填充因子为27%。展开更多
SnSe is considered to be a promising thermoelectric material due to a high ZT value and abundant and non-toxic composition elements. However, the thermal stability is an important issue for commercial application. In ...SnSe is considered to be a promising thermoelectric material due to a high ZT value and abundant and non-toxic composition elements. However, the thermal stability is an important issue for commercial application. In particular,thermoelectric materials are in the high temperature for a long time due to the working condition. The present work investigates the thermal stability and oxidation resistance of single crystal SnSe thermoelectric materials. The scanning electron microscopy（SEM） and transmission electron microscopy（TEM） results show that the internal of SnSe crystal is not easily oxidized, while the x-ray photoelectron spectroscopy（XPS） results indicate that the surface of SnSe is slight oxidized to SnO_2. Even if the surface is oxidized, the SnSe crystal still exhibits stable thermoelectric properties. Meanwhile,the crystallization quality of SnSe samples can be improved after the appropriate heat treatment in the air, which is in favor of the carrier mobility and can improve the electrical conduction properties of SnSe. Moreover, the decrease of defect density after heat treatment can further improve the Seebeck coefficient and electrical transport properties of SnSe. The density functional theory（DFT） calculation verifies the important role of defect on the electrical conductivity and electron configuration. In summary, appropriate temperature annealing is an effective way to improve the transmission properties of SnSe single crystal thermoelectric materials.展开更多
文摘采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。
文摘采用磁控溅射法,先在镀钼的钠钙玻璃衬底上共溅射Cu、Sn金属层后,然后在顶部溅射一层Zn S,制备出Cu_2ZnSnS_4(CZTS)薄膜的预制层。对预制层进行低温合金,然后以硫粉作为硫源在石英管中进行高温硫化,得到表面平整但晶粒较小的CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用所得到的CZTS薄膜制备了太阳电池,其开路电压:Voc=442 m V,短路电流密度:Jsc=5.08 m A/cm^2,光电转换效率达到0.62%。
文摘采用磁控溅射Zn-Cu-Sn-Cu金属预置层并后硒化的方法在镀钼玻璃衬底上制备了CZTSe薄膜。利用X射线衍射仪(XRD)、拉曼光谱测试仪(Raman)、扫描电子显微镜(SEM)、能谱仪(EDS)和热探针对所制备CZTSe薄膜的晶相结构、拉曼位移、表面形貌、化学组分和导电类型进行表征分析,分析结果表明:所制备CZTSe薄膜结晶质量好、无二次相、晶粒均匀致密、化学组分是贫铜富锌的,且导电类型为p型,符合高效率太阳电池吸收层的要求。将CZTSe吸收层制备成有效面积为0.35 cm2的Mo/CZTSe/Cd S/i-ZnO/Zn O:Al/Ni-Al电池,其效率为1.17%,开路电压为419 m V,短路电流密度为10.21 m A/cm^2,填充因子为27%。
基金Project supported by the National Natural Science Foundation of China(Grant No.61864012)
文摘SnSe is considered to be a promising thermoelectric material due to a high ZT value and abundant and non-toxic composition elements. However, the thermal stability is an important issue for commercial application. In particular,thermoelectric materials are in the high temperature for a long time due to the working condition. The present work investigates the thermal stability and oxidation resistance of single crystal SnSe thermoelectric materials. The scanning electron microscopy（SEM） and transmission electron microscopy（TEM） results show that the internal of SnSe crystal is not easily oxidized, while the x-ray photoelectron spectroscopy（XPS） results indicate that the surface of SnSe is slight oxidized to SnO_2. Even if the surface is oxidized, the SnSe crystal still exhibits stable thermoelectric properties. Meanwhile,the crystallization quality of SnSe samples can be improved after the appropriate heat treatment in the air, which is in favor of the carrier mobility and can improve the electrical conduction properties of SnSe. Moreover, the decrease of defect density after heat treatment can further improve the Seebeck coefficient and electrical transport properties of SnSe. The density functional theory（DFT） calculation verifies the important role of defect on the electrical conductivity and electron configuration. In summary, appropriate temperature annealing is an effective way to improve the transmission properties of SnSe single crystal thermoelectric materials.
