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纳米Al2O3包覆富锂锰基正极材料Li1.2Ni0.13Co0.13Mn0.54O2的性能研究 被引量:6
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作者 陈良丹 邹伟 +4 位作者 吴亮 夏凡杰 胡执一 李昱 苏宝连 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2020年第6期1329-1336,共8页
采用纳米三氧化二铝(Al2O3)对富锂锰基正极材料Li1.2Ni0.13Co0.13Mn0.54O2进行表面均匀包覆,并考察了最优纳米Al2O3包覆量下材料的电化学性能.扫描电子显微镜(SEM)和透射电子显微镜(TEM)显示了纳米Al2O3对富锂锰基正极材料表面均匀包覆,... 采用纳米三氧化二铝(Al2O3)对富锂锰基正极材料Li1.2Ni0.13Co0.13Mn0.54O2进行表面均匀包覆,并考察了最优纳米Al2O3包覆量下材料的电化学性能.扫描电子显微镜(SEM)和透射电子显微镜(TEM)显示了纳米Al2O3对富锂锰基正极材料表面均匀包覆,X射线衍射分析(XRD)结果表明包覆后富锂材料依然具有良好的层状结构.恒流充/放电循环测试发现,包覆后的Li1.2Ni0.13Co0.13Mn0.54O2材料的首次放电比容量为249.7 mA·h/g,循环100次后的容量保持率为89.5%,与未包覆的Li1.2Ni0.13Co0.13Mn0.54O2材料相比,容量保持率提升约13%.循环伏安(CV)和电化学阻抗(EIS)测试结果表明,纳米Al 2O 3包覆可有效抑制材料极化,降低界面阻抗和电荷转移阻抗,进而提升富锂锰基正极材料的电化学性能. 展开更多
关键词 锂离子电池 Li1.2Ni0.13Co0.13Mn0.54O2 纳米三氧化二铝 表面改性
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Achieving superior performance in thermoelectric Bi_(0.4)Sb_(1.6)Te_(3.72)by enhancing texture and inducing high-density line defects 被引量:3
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作者 Junhao Qiu Yonggao Yan +11 位作者 Hongyao Xie Tingting Luo Fanjie Xia Lei Yao Min Zhang Ting Zhu Gangjian Tan Xianli Su Jinsong Wu Ctirad Uher Hongyi Jiang Xinfeng Tang 《Science China Materials》 SCIE EI CAS CSCD 2021年第6期1507-1520,共14页
Miniaturization of efficient thermoelectric(TE)devices has long been hindered by the weak mechanical strength and insufficient heat-to-electricity conversion efficiency of zone-melted(ZM)ingots.Here,we successfully pr... Miniaturization of efficient thermoelectric(TE)devices has long been hindered by the weak mechanical strength and insufficient heat-to-electricity conversion efficiency of zone-melted(ZM)ingots.Here,we successfully prepared a robust high-performance p-type Bi_(0.4)Sb_(1.6)Te_(3.72)bulk alloy by combining an ultrafast thermal explosion reaction with the spark plasma sintering(TER-SPS)process.It is observed that the introduced excess Te not only enhances the(00l)-oriented texture to ensure an outstanding power factor(PF)of 5 mW m^(−1)K^(−2),but also induces extremely high-density line defects of up to 10^(11)–10^(12)cm^(−2).Benefiting from such heavily dense line defects,the enhancement of the electronic thermal conductance from the increased electron mobility is fully compensated by the stronger phonon scattering,leading to an evident net reduction in total thermal conductivity.As a result,a superior ZT value of~1.4 at 350 K is achieved,which is 40%higher than that of commercial ZM ingots.Moreover,owing to the strengthening of grain refinement and highdensity line defects,the mechanical compressive stress reaches up to 94 MPa,which is 154%more than that of commercial single crystals.This research presents an effective strategy for the collaborative optimization of the texture,TE performance,and mechanical strength of Bi2Te3-based materials.As such,the present study contributes significantly to the future commercial development of miniature TE devices. 展开更多
关键词 THERMOELECTRIC Bi_(2)Te_(3) TEXTURE line defect micro device
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