A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The...A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.展开更多
A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat ro...A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device’s size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip’s fabrication cost.展开更多
LiMn 2O 4-x F x prepared by the sol gel method has a perfect crystal formation .The crystal particle size of the material was medium and distributed uniformly. The substitution of F for O increased the specific...LiMn 2O 4-x F x prepared by the sol gel method has a perfect crystal formation .The crystal particle size of the material was medium and distributed uniformly. The substitution of F for O increased the specific capacity of the material at the cost of the cycleability .The explanation of this results is that the F decreases the valence of Mn,that is,more Mn 3+ and less Mn 4+ exist in the material.The increase of Mn 3+ will improve the initial specific capacity and Mn 3+ is the original reason for Jahn Teller effect that caused the poor cycleability of the cathode material by the micro distortion of the crystal structure. In addition, the expanded measurement of the crystal lattice is also the reason for the poor cycleability.Therefore,the results of F substitution and cation substitution are opposite.If the two methods are combined,they can compensate the inability each other and the satisfactory results may be obtained.展开更多
Silica-based 64-channel arrayed waveguide gratings （AWGs） with double functions and 0.4 nm （50 GHz） channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spec...Silica-based 64-channel arrayed waveguide gratings （AWGs） with double functions and 0.4 nm （50 GHz） channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5dB to 6.4dB, the crosstalk is better than -34dB, the 1 dB bandwidth is 0.12nm, the 3dB bandwidth is 0.218nm, and the polarization-dependent loss （PDL） is less than 0.5 dB for Gauss response. When the insertion loss ranges from 5.8dB to 7.8dB, the crosstalk is better than -30dB, the 1 dB bandwidth is 0.24nm, the 3dB bandwidth is 0.33nm, and the PDL is less than 0.2dB for fiat-top response.展开更多
文摘A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.
文摘A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device’s size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip’s fabrication cost.
文摘LiMn 2O 4-x F x prepared by the sol gel method has a perfect crystal formation .The crystal particle size of the material was medium and distributed uniformly. The substitution of F for O increased the specific capacity of the material at the cost of the cycleability .The explanation of this results is that the F decreases the valence of Mn,that is,more Mn 3+ and less Mn 4+ exist in the material.The increase of Mn 3+ will improve the initial specific capacity and Mn 3+ is the original reason for Jahn Teller effect that caused the poor cycleability of the cathode material by the micro distortion of the crystal structure. In addition, the expanded measurement of the crystal lattice is also the reason for the poor cycleability.Therefore,the results of F substitution and cation substitution are opposite.If the two methods are combined,they can compensate the inability each other and the satisfactory results may be obtained.
文摘Silica-based 64-channel arrayed waveguide gratings （AWGs） with double functions and 0.4 nm （50 GHz） channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5dB to 6.4dB, the crosstalk is better than -34dB, the 1 dB bandwidth is 0.12nm, the 3dB bandwidth is 0.218nm, and the polarization-dependent loss （PDL） is less than 0.5 dB for Gauss response. When the insertion loss ranges from 5.8dB to 7.8dB, the crosstalk is better than -30dB, the 1 dB bandwidth is 0.24nm, the 3dB bandwidth is 0.33nm, and the PDL is less than 0.2dB for fiat-top response.
