The implementation of broadband monolithic baluns based on CMOS technology is investigated. The configuration and parameterized layout are analyzed. Then,a wide-band lumped element equivalent circuit model accounting ...The implementation of broadband monolithic baluns based on CMOS technology is investigated. The configuration and parameterized layout are analyzed. Then,a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted, with high accuracy in a broadband frequency range ,via combination of physical formula and fitting optimization. Two baluns were implemented with TSMC＇s one-poly eight-metal （1P8M） 0.13μm mixed-signal （MS）/RF CMOS process. The S-parameters of these two baluns were measured using a vector network analyzer. The measured results agree well with the modeled parameters up to millimeter-wave frequencies.展开更多
A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model e...A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.展开更多
文摘The implementation of broadband monolithic baluns based on CMOS technology is investigated. The configuration and parameterized layout are analyzed. Then,a wide-band lumped element equivalent circuit model accounting for all necessary physical effects is proposed and model parameters are extracted, with high accuracy in a broadband frequency range ,via combination of physical formula and fitting optimization. Two baluns were implemented with TSMC＇s one-poly eight-metal （1P8M） 0.13μm mixed-signal （MS）/RF CMOS process. The S-parameters of these two baluns were measured using a vector network analyzer. The measured results agree well with the modeled parameters up to millimeter-wave frequencies.
文摘A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.
