A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector i...A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 m V/m W at 630 GHz. The measured noise effective power （NEP） is less than 35pW/Hz0.5 at 570 -630GHz. The minimum NEP is 14pW/Hz0.5 at 630GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61434006the Basic Application Research of Sichuan Province under Grant No 2017JY0227
文摘A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 m V/m W at 630 GHz. The measured noise effective power （NEP） is less than 35pW/Hz0.5 at 570 -630GHz. The minimum NEP is 14pW/Hz0.5 at 630GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
