As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing fo...As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,etc.Different from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum techniques.Thus,a-Ga_(2)O_(3)extremely facilitates important applications in various applied fields.Therefore,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are discussed.Additionally,potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies.Subsequently,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the National Natural Science Foundation of China(Grant Nos.62204126 and 62204125)+1 种基金the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921119,XK1060921002,and XK1060921115)the Open Fund of the Key Laboratory of Aerospace Information Materials and Physics(NUAA)MIIT。
文摘As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,etc.Different from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum techniques.Thus,a-Ga_(2)O_(3)extremely facilitates important applications in various applied fields.Therefore,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are discussed.Additionally,potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies.Subsequently,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.
