随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了...随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了为抑制短沟道效应而引入的不同UTBB SOI MOSFETs结构,分析了这些结构能够有效抑制短沟道效应(如漏致势垒降低、亚阈值摆幅、关态泄露电流、开态电流等)的机理;而后基于这六种技术,对近年来在UTBB SOI MOSFETs短沟道效应抑制方面所做的工作进行了总结;最后对未来技术的发展进行了展望。展开更多
高能效温度传感器在物联网(Internet of thing,IoT)系统中有着极为广泛的应用。提出了一种基于流水线型时间-数字转换器(Time-to-digital converter,TDC)的时域温度传感器,该温度传感器中的TDC电路采用了一种具有高线性度的可编程时间...高能效温度传感器在物联网(Internet of thing,IoT)系统中有着极为广泛的应用。提出了一种基于流水线型时间-数字转换器(Time-to-digital converter,TDC)的时域温度传感器,该温度传感器中的TDC电路采用了一种具有高线性度的可编程时间放大器(Programmable-gain time amplifier,PGTA),使温度传感器的分辨率得到了较大提高。由于该流水线型TDC的转换速率高达约30 ns/conversion,使温度传感器具备高速的特点;又因为IoT系统通常采用周期性工作/关断模式,因而该温度传感器非常适用于IoT应用中。提出的温度传感器在台积电40nm工艺下进行了流片验证,测试结果表明,该温度传感器在-20~80℃范围内实现了90 mK的分辨率,测温时间为1.5μs。在0.7 V电源电压下工作电流为6μA,实现了51 fJ·K^(2)的品质因子。展开更多
This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the...This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.展开更多
A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assu...A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.展开更多
By solving the 2D Poisson＇s equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical ...By solving the 2D Poisson＇s equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field （RESURF） criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.展开更多
文摘随着栅极长度、硅膜厚度以及埋氧层厚度的减小,MOS器件短沟道效应变得越来越严峻。本文首先给出了决定全耗尽绝缘体上硅短沟道效应的三种机制;然后从接地层、埋层工程、沟道工程、源漏工程、侧墙工程和栅工程等六种工程技术方面讨论了为抑制短沟道效应而引入的不同UTBB SOI MOSFETs结构,分析了这些结构能够有效抑制短沟道效应(如漏致势垒降低、亚阈值摆幅、关态泄露电流、开态电流等)的机理;而后基于这六种技术,对近年来在UTBB SOI MOSFETs短沟道效应抑制方面所做的工作进行了总结;最后对未来技术的发展进行了展望。
文摘高能效温度传感器在物联网(Internet of thing,IoT)系统中有着极为广泛的应用。提出了一种基于流水线型时间-数字转换器(Time-to-digital converter,TDC)的时域温度传感器,该温度传感器中的TDC电路采用了一种具有高线性度的可编程时间放大器(Programmable-gain time amplifier,PGTA),使温度传感器的分辨率得到了较大提高。由于该流水线型TDC的转换速率高达约30 ns/conversion,使温度传感器具备高速的特点;又因为IoT系统通常采用周期性工作/关断模式,因而该温度传感器非常适用于IoT应用中。提出的温度传感器在台积电40nm工艺下进行了流片验证,测试结果表明,该温度传感器在-20~80℃范围内实现了90 mK的分辨率,测温时间为1.5μs。在0.7 V电源电压下工作电流为6μA,实现了51 fJ·K^(2)的品质因子。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704084 and 61874059)。
文摘This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.
基金supported by the National Natural Science Foundation of China(Grant No.61076073)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20133223110003)
文摘A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.
基金Projects supported by the National Natural Science Foundation of China (Grant No. 61076073)the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 09KJB510010)+1 种基金the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201011)the Research and Innovation Project for College Graduates of Jiangsu Province, China (Grant No. CXZZ11 0382)
文摘By solving the 2D Poisson＇s equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field （RESURF） criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.
