Hall effects have been the central paradigms in modern physics,materials science and practical applications,and have led to many exciting breakthroughs,including the discovery of topological Chern invariants and the r...Hall effects have been the central paradigms in modern physics,materials science and practical applications,and have led to many exciting breakthroughs,including the discovery of topological Chern invariants and the revolution of metrological resistance standard.To date,the Hall effects have mainly focused on a single degree of freedom(Do F),and most of them require the breaking of spatial-inversion and/or time-reversal symmetries.Here we demonstrate a new type of Hall effect,i.e.,layer-valley Hall effect,based on a combined layer-valley Do F characterized by the product of layer and valley indices.The layer-valley Hall effect has a quantum origin arising from the layer-valley contrasting Berry curvature,and can occur in nonmagnetic centrosymmetric crystals with both spatial-inversion and time-reversal symmetries,transcending the symmetry constraints of single Do F Hall effect based on the constituent layer or valley index.Moreover,the layer-valley Hall effect is highly tunable and shows a W-shaped pattern in response to the out-of-plane electric fields.Additionally,we discuss the potential detection approaches and material-specific design principles of layer-valley Hall effect.Our results demonstrate novel Hall physics and open up exotic paradigms for new research direction of layer-valleytronics that exploits the quantum nature of the coupled layer-valley DoF.展开更多
Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application poten...Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.展开更多
Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations ...Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally.In this review,the 2DTIs,ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides(TMDs)and to multi-elemental materials,with different thicknesses,structures,and phases,have been summarized and discussed.The topological properties(especially the quantum spin Hall effect and Dirac fermion feature)and potential applications have been summarized.This review also points out the challenge and opportunities for future 2DTI study,especially on the device applications based on the topological properties.展开更多
Metal-pentazolate compounds as candidates for novel high-energy-density materials have attracted extensive attention in recent years.However,dehydrated pentazolate salts of transition metal iron are rarely reported.We...Metal-pentazolate compounds as candidates for novel high-energy-density materials have attracted extensive attention in recent years.However,dehydrated pentazolate salts of transition metal iron are rarely reported.We predict two new iron pentazolate salts Fdd2-FeN10 and P1(No.1)-FeN10 using a constrained crystal search method based on first-principles calculations.We propose that the stable Fdd2-FeN_(10) crystal may be synthesized from FeN and N_(2) above 20 GPa,and its formation enthalpy is lower than the reported iron pentazolate salt(marked as P1(No.2)-FeN_(10)).Crystal P1(No.1)-FeN_(10) is composed of iron bispentazole molecules.Formation enthalpy,phonon spectrum and ab initio molecular dynamics calculations are performed to show their thermodynamic,mechanical and dynamic properties.Moreover,the high energy density(3.709 kJ/g,6.349 kJ/g)and good explosive performance indicate their potential applications as high-energy-density materials.展开更多
It has been widely accepted that silicene is a topological insulator, and its gap closes first and then opens again with increasing electric field, which indicates a topological phase transition from the quantum spin ...It has been widely accepted that silicene is a topological insulator, and its gap closes first and then opens again with increasing electric field, which indicates a topological phase transition from the quantum spin Hall state to the band insulator state. However, due to the relatively large atomic spacing of silicene, which reduces the bandwidth, the electron–electron interaction in this system is considerably strong and cannot be ignored. The Hubbard interaction, intrinsic spin orbital coupling(SOC), and electric field are taken into consideration in our tight-binding model, with which the phase diagram of silicene is carefully investigated on the mean field level. We have found that when the magnitudes of the two mass terms produced by the Hubbard interaction and electric potential are close to each other, the intrinsic SOC flips the sign of the mass term at either K or K for one spin and leads to the emergence of the spin-polarized quantum anomalous Hall state.展开更多
Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors.Recently,surface-dependent vortex core states have been observed in the newly discovered kagome supercon...Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors.Recently,surface-dependent vortex core states have been observed in the newly discovered kagome superconductors CsV_(3)Sb_(5).Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface states,its origin remains elusive.In this study,we present observations of tunable vortex bound states(VBSs)in two chemically-doped kagome superconductors Cs(V_(1-x)Tr_(x))_(3)Sb_(5)(Tr=Ta or Ti),using low-temperature scanning tunneling microscopy/spectroscopy.The CsV_(3)Sb_(5)-derived kagome superconductors exhibit full-gap-pairing superconductivity accompanied by the absence of long-range charge orders,in contrast to pristine CsV_(3)Sb_(5).Zero-energy conductance maps demonstrate a field-driven continuous reorientation transition of the vortex lattice,suggesting multiband superconductivity.The Ta-doped CsV_(3)Sb_(5)displays the conventional cross-shaped spatial evolution of Caroli-de Gennes-Matricon bound states,while the Tidoped CsV_(3)Sb_(5)exhibits a sharp,non-split zero-bias conductance peak(ZBCP)that persists over a long distance across the vortex.The spatial evolution of the non-split ZBCP is robust against surface effects and external magnetic field but is related to the doping concentrations.Our study reveals the tunable VBSs in multiband chemically-doped CsV_(3)Sb_(5)system and offers fresh insights into previously reported Y-shaped ZBCP in a non-quantum-limit condition at the surface of kagome superconductor.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61888102 and 12274447)the National Key Research and Development Program of China(Grant Nos.2021YFA1202900 and 2023YFA1407000)+2 种基金the KeyArea Research and Development Program of Guangdong Province,China(Grant No.2020B0101340001)the Guangdong Major Project of Basic and Applied Basic Research(Grant No.2021B0301030002)the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant No.XDB0470101)。
文摘Hall effects have been the central paradigms in modern physics,materials science and practical applications,and have led to many exciting breakthroughs,including the discovery of topological Chern invariants and the revolution of metrological resistance standard.To date,the Hall effects have mainly focused on a single degree of freedom(Do F),and most of them require the breaking of spatial-inversion and/or time-reversal symmetries.Here we demonstrate a new type of Hall effect,i.e.,layer-valley Hall effect,based on a combined layer-valley Do F characterized by the product of layer and valley indices.The layer-valley Hall effect has a quantum origin arising from the layer-valley contrasting Berry curvature,and can occur in nonmagnetic centrosymmetric crystals with both spatial-inversion and time-reversal symmetries,transcending the symmetry constraints of single Do F Hall effect based on the constituent layer or valley index.Moreover,the layer-valley Hall effect is highly tunable and shows a W-shaped pattern in response to the out-of-plane electric fields.Additionally,we discuss the potential detection approaches and material-specific design principles of layer-valley Hall effect.Our results demonstrate novel Hall physics and open up exotic paradigms for new research direction of layer-valleytronics that exploits the quantum nature of the coupled layer-valley DoF.
基金Project supported by the National Key R&D Program,China(Grant No.2016YFA0300904)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH004)+1 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant Nos.XDPB06 and XDB07010100)the National Natural Science Foundation of China(Grant Nos.61734001 and 51572289)
文摘Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.
基金Project supported by the Beijing Natural Science Foundation,China(Grant Nos.Z190006 and 4192054)the National Natural Science Foundation of China(Grant Nos.61971035,61901038,and 61725107)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000)Beijing Institute of Technology Research Fund Program for Young Scholars(Grant No.3050011181814).
文摘Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally.In this review,the 2DTIs,ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides(TMDs)and to multi-elemental materials,with different thicknesses,structures,and phases,have been summarized and discussed.The topological properties(especially the quantum spin Hall effect and Dirac fermion feature)and potential applications have been summarized.This review also points out the challenge and opportunities for future 2DTI study,especially on the device applications based on the topological properties.
基金supported by the National Natural Science Foundation of China(Grant No.51971037)the National Key Research and Development Program of China(Grant No.2017YFB0701603)。
文摘Metal-pentazolate compounds as candidates for novel high-energy-density materials have attracted extensive attention in recent years.However,dehydrated pentazolate salts of transition metal iron are rarely reported.We predict two new iron pentazolate salts Fdd2-FeN10 and P1(No.1)-FeN10 using a constrained crystal search method based on first-principles calculations.We propose that the stable Fdd2-FeN_(10) crystal may be synthesized from FeN and N_(2) above 20 GPa,and its formation enthalpy is lower than the reported iron pentazolate salt(marked as P1(No.2)-FeN_(10)).Crystal P1(No.1)-FeN_(10) is composed of iron bispentazole molecules.Formation enthalpy,phonon spectrum and ab initio molecular dynamics calculations are performed to show their thermodynamic,mechanical and dynamic properties.Moreover,the high energy density(3.709 kJ/g,6.349 kJ/g)and good explosive performance indicate their potential applications as high-energy-density materials.
基金supported by the National Key Basic Research Program of China(Grant Nos.2014CB920903,2013CB921903,2011CBA00108,and 2012CB937500)the National Natural Science Foundation of China(Grant Nos.11021262,11172303,11404022,11225418,and 11174337)+2 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20121101110046)the Excellent Young Scholars Research Fund of Beijing Institute of Technology(Grant No.2014CX04028)the Basic Research Funds of Beijing Institute of Technology(Grant No.20141842001)
文摘It has been widely accepted that silicene is a topological insulator, and its gap closes first and then opens again with increasing electric field, which indicates a topological phase transition from the quantum spin Hall state to the band insulator state. However, due to the relatively large atomic spacing of silicene, which reduces the bandwidth, the electron–electron interaction in this system is considerably strong and cannot be ignored. The Hubbard interaction, intrinsic spin orbital coupling(SOC), and electric field are taken into consideration in our tight-binding model, with which the phase diagram of silicene is carefully investigated on the mean field level. We have found that when the magnitudes of the two mass terms produced by the Hubbard interaction and electric potential are close to each other, the intrinsic SOC flips the sign of the mass term at either K or K for one spin and leads to the emergence of the spin-polarized quantum anomalous Hall state.
基金supported by the National Natural Science Foundation of China(61888102,52022105,92065109,and 12174428)the National Key Research and Development Projects of China(2022YFA1204100,2018YFA0305800,2019YFA0308500,2020YFA0308800,and 2022YFA1403400)+4 种基金the CAS Project for Young Scientists in Basic Research(YSBR-003 and 2022YSBR-048)the Innovation Program of Quantum Science and Technology(2021ZD0302700)the financial support from the European Research Council(ERC Consolidator Grant “Nonlinear Topo”,No.815869)ISF-Singapore-Israel Research Grant(3520/20)supported by the US DOE,Basic Energy Sciences(DE-FG02-99ER45747)。
文摘Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors.Recently,surface-dependent vortex core states have been observed in the newly discovered kagome superconductors CsV_(3)Sb_(5).Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface states,its origin remains elusive.In this study,we present observations of tunable vortex bound states(VBSs)in two chemically-doped kagome superconductors Cs(V_(1-x)Tr_(x))_(3)Sb_(5)(Tr=Ta or Ti),using low-temperature scanning tunneling microscopy/spectroscopy.The CsV_(3)Sb_(5)-derived kagome superconductors exhibit full-gap-pairing superconductivity accompanied by the absence of long-range charge orders,in contrast to pristine CsV_(3)Sb_(5).Zero-energy conductance maps demonstrate a field-driven continuous reorientation transition of the vortex lattice,suggesting multiband superconductivity.The Ta-doped CsV_(3)Sb_(5)displays the conventional cross-shaped spatial evolution of Caroli-de Gennes-Matricon bound states,while the Tidoped CsV_(3)Sb_(5)exhibits a sharp,non-split zero-bias conductance peak(ZBCP)that persists over a long distance across the vortex.The spatial evolution of the non-split ZBCP is robust against surface effects and external magnetic field but is related to the doping concentrations.Our study reveals the tunable VBSs in multiband chemically-doped CsV_(3)Sb_(5)system and offers fresh insights into previously reported Y-shaped ZBCP in a non-quantum-limit condition at the surface of kagome superconductor.
基金supported by the National Natural Science Foundation of China(11734003,62275016,12274029,and 92163206)the National Key Research and Development Program of China(2020YFA0308800)+1 种基金Beijing Natural Science Foundation(Z210006 and Z190006)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)。
基金supported by the National Natural Science Foundation of China(12004252,52272265,U1932217,11974246,52072400,52025025,and 92065109)the National Key R&D Program of China(2018YFA0704300,2021YFA1401800,2018YFE0202601,2020YFA0308800,and 2022YFA1403400)+2 种基金Shanghai Science and Technology Plan(21DZ2260400)Beijing Natural Science Foundation(Z190010,Z210006,and Z190006)the support from the Analytical Instrumentation Center(#SPST-AIC10112914),School of Physical Science and Technology(SPST),ShanghaiTech University。
基金supported by the National Key R&D Program of China(2020YFA0308800,2016YFA0300600,and 2017YFB0701600)the National Natural Science Foundation of China(11734003,12061131002,12004028,and 12004035)+3 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)the China Postdoctoral Science Foundation(2020M670106)the Singapore Ministry of Education AcRF Tier 2(MOE2019-T2-1-001)Beijing Institute of Technology Research Fund Program for Young Schola。
