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一种10G以太网控制器IP的结构与应用 被引量:2
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作者 姚迎学 胡孔阳 +1 位作者 周洁 刘国成 《中国集成电路》 2022年第11期26-29,80,共5页
本文中介绍的10G以太网MAC控制器IP应用于高性能DSP运行过程中核内产生的大量实时数据的导出,用于远程系统联调。采用了与千兆以太网相同的外形接口,兼容千兆以太网帧格式。10GMAC控制器通过采用4通道32比特并行数据处理,使用156.25Mhz... 本文中介绍的10G以太网MAC控制器IP应用于高性能DSP运行过程中核内产生的大量实时数据的导出,用于远程系统联调。采用了与千兆以太网相同的外形接口,兼容千兆以太网帧格式。10GMAC控制器通过采用4通道32比特并行数据处理,使用156.25Mhz工作频率以及DDR(双边沿)采样方式,获得了10倍于千兆网的带宽。控制器预留可选择的XGMII接口和GMII接口,向下兼容5Gbps、2.5Gbps和1Gbps传输速率,集成了丰富的AMBA总线接口(AXI、APB),满足DMA传输以及对控制器中各配置和状态寄存器(CSR)空间的访问。 展开更多
关键词 10GMAC控制器IP 兼容千兆网 XGMII接口 AMBA总线 DMA
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Reversible optical control of the metal-insulator transition across the epitaxial heterointerface of a VO_(2)/Nb:TiO_(2) junction
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作者 Yuanjun Yang Guilin Wang +18 位作者 Wenyu Huang Cangmin Wang Yingxue Yao Xiaoli Mao Hui Lin Ting Zhang Huaili Qiu Zhongjun Li Hui Zhang Yuewei Yin Jinhua Guo Yong Guan Wensheng Yan Zhenlin Luo Chongwen Zou Yangchao Tian Gang Xiao Xiaoguang Li Chen Gao 《Science China Materials》 SCIE EI CAS CSCD 2021年第7期1687-1702,共16页
Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction... Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction made of a correlated electron oxide thin film VO_(2) and a conductive 0.05 wt% Nb-doped TiO_(2) single crystal,whose metal-insulator transition(MIT)across the nanoscale heterointerface can be efficiently modulated by visible light irradiation.The magnitude of the MIT decreases from ~350 in the dark state to ~7 in the illuminated state,obeying a power law with respect to the light power density.The junction resistance is switched in a reversible and synchronous manner by turning light on and off.The optical tunability of it is also exponentially proportional to the light power density,and a 320-fold on/off ratio is achieved with an irradiance of 65.6 mW cm^(-2) below the MIT temperature.While the VO_(2) thin film is metallic above the MIT temperature,the optical tunability is remarkably weakened,with a one-fold change remaining under light illumination.These results are co-attributed to a net reduction(~15 meV)in the apparent barrier height and the photocarrier-injection-induced metallization of the VO_(2) heterointerface through a photovoltaic effect,which is induced by deep defect level transition upon the visible light irradiance at low temperature.Additionally,the optical tunability is minimal,resulting from the quite weak modulation of the already metallic band structure in the Schottky-type junction above the MIT temperature.This work enables a remotely optical scheme to manipulate the MIT,implying potential uncooled photodetection and photoswitch applications. 展开更多
关键词 metal-insulator transition VO2 thin film optical control strongly correlated electron material PHOTOSWITCH
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