Self-seeded aluminium nitride （AlN） crystals are grown in tungsten and hot pressed boron nitride （HPBN） crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized ...Self-seeded aluminium nitride （AlN） crystals are grown in tungsten and hot pressed boron nitride （HPBN） crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy （HRTEM）, scanning electron microscopy （SEM） and Micro-Rarnan spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.展开更多
There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this...There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.展开更多
文摘Self-seeded aluminium nitride （AlN） crystals are grown in tungsten and hot pressed boron nitride （HPBN） crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy （HRTEM）, scanning electron microscopy （SEM） and Micro-Rarnan spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.
基金Supported by the National Natural Science Foundation of China under Grant No 10574130.
文摘There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.
