In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed....In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well.展开更多
Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated cir...Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.展开更多
基金supported by the 2011 PhD Programs Foundation of the Ministry of Education of China(No.20110185110003)
文摘In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well.
基金supported by the 2011 Ph.D.Programs Foundation of the Ministry of Education of China(No.20110185110003)
文摘Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.
