氮化镓(gallium nitride,GaN)材料因其优秀的物理特性受到越来越多研究者的青睐,但常关型GaN基高电子迁移率晶体管(high electron mobility transistor,HEMT)技术发展尚处于初级阶段。文中的研究对象是薄势垒常关型HEMT,该类器件可以很...氮化镓(gallium nitride,GaN)材料因其优秀的物理特性受到越来越多研究者的青睐,但常关型GaN基高电子迁移率晶体管(high electron mobility transistor,HEMT)技术发展尚处于初级阶段。文中的研究对象是薄势垒常关型HEMT,该类器件可以很大程度地降低栅极区域的刻蚀损伤,因此在未来的电力电子市场中极具潜力。文中工作中制备基于SiON/Al_(2)O_(3)叠层栅介质的薄势垒型HEMT器件,在叠层介质的帮助下,器件的阈值电压与肖特基栅极器件几乎一致,可以实现常关型操作。其最大关态击穿电压可以达到700V,栅极耐压超过23V,在超过1000s的正栅应力测试中阈值电压漂移量小于1V。通过对其关态击穿、栅极击穿、栅极应力测试等特性的分析,对其可靠性方面有更为深入的认识,同时进一步地展现出薄势垒HEMT器件的结构优势。展开更多
Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different method...Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.展开更多
文摘氮化镓(gallium nitride,GaN)材料因其优秀的物理特性受到越来越多研究者的青睐,但常关型GaN基高电子迁移率晶体管(high electron mobility transistor,HEMT)技术发展尚处于初级阶段。文中的研究对象是薄势垒常关型HEMT,该类器件可以很大程度地降低栅极区域的刻蚀损伤,因此在未来的电力电子市场中极具潜力。文中工作中制备基于SiON/Al_(2)O_(3)叠层栅介质的薄势垒型HEMT器件,在叠层介质的帮助下,器件的阈值电压与肖特基栅极器件几乎一致,可以实现常关型操作。其最大关态击穿电压可以达到700V,栅极耐压超过23V,在超过1000s的正栅应力测试中阈值电压漂移量小于1V。通过对其关态击穿、栅极击穿、栅极应力测试等特性的分析,对其可靠性方面有更为深入的认识,同时进一步地展现出薄势垒HEMT器件的结构优势。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11675198,11875097,11975257,61774072,61574026,and 61971090)the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and2016YFB0400601)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.DUT19LK45)the China Postdoctoral Science Foundation(Grant No.2016M591434)the Science and Technology Plan of Dalian City,China(Grant No.2018J12GX060).
文摘Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.
