The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and witho...The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.展开更多
InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality...InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.展开更多
According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which...According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.展开更多
The diluted magnetic semiconductor （DMS）, which exploits both the spin and the charge of car- riers, is one of the most important materials to re- alize semiconductor spintronies.Many research works have been focuse...The diluted magnetic semiconductor （DMS）, which exploits both the spin and the charge of car- riers, is one of the most important materials to re- alize semiconductor spintronies.Many research works have been focused on the magnetic properties of Mn-doped ZnO due to its room-temperature ferro- magnetism （RT-FM）, which is very important for commercial applications. Recently, Mn-doped ZnO nanostruetures were developed for the nano spintronic devices, and kinds of Mn-doped ZnO nanostrue- tures have been prepared with room-temperature fer- romagnetic behavior, while conflicting arguments produced no consensus on the origin of RT-FM in these systems. Vinod et al. reported that the RT-FM in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries and the interaction between Mn2＋ ions and Zn2＋ ions.Yihnaz et al. found that bound magnetic polarons are responsible to the RT-FM. Gao et al. reported that the exchange interaction between the donor electron trapped by the singly ionized oxygen vacancy and sur- rounding Mn ions is responsible for the RT-FM. It was also reported that the ferromagnetism of the Mn-doped ZnO nanowires could be controlled by the electric-field or Mn doping levels. This work will investigate the magnetic property of the Mn-doped ZnO nanowires grown by the chemical vapor deposi- tion （CVD） method under the air condition and under the vacuum condition, respectively, and it is found that crystalline quality plays an important role to-wards the room-temperature ferromagnetic behavior of the doped nanowires.展开更多
基金Supported by Aeronautical Science Foundation of China(20132435,20142435001)China Postdoctoral Science Foundation(2014M560936)General armaments department common technology project foundation(9140A12050414ZK33-001)
基金Supported by the National Natural Science Foundation of China under Grant Nos 11574362,61210014,and 11374340the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission under Grant No Z151100003515001
文摘The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
基金Supported by the Aeronautical Science Foundation of China under Grant No 20132435the National High-Technology Research and Development Program of China under Grant No 2013AA031903+1 种基金the National Natural Science Foundation of China under Grant Nos 61106013 and 61275107the China Postdoctoral Science Foundation under Grant No 2014M560936
文摘InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11574362,61210014,11374340,and 11474205)the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515001)
文摘According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11175014 and 50502005, and the Beijing Natural Science Foundation under Grant No 1092014.
文摘The diluted magnetic semiconductor （DMS）, which exploits both the spin and the charge of car- riers, is one of the most important materials to re- alize semiconductor spintronies.Many research works have been focused on the magnetic properties of Mn-doped ZnO due to its room-temperature ferro- magnetism （RT-FM）, which is very important for commercial applications. Recently, Mn-doped ZnO nanostruetures were developed for the nano spintronic devices, and kinds of Mn-doped ZnO nanostrue- tures have been prepared with room-temperature fer- romagnetic behavior, while conflicting arguments produced no consensus on the origin of RT-FM in these systems. Vinod et al. reported that the RT-FM in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries and the interaction between Mn2＋ ions and Zn2＋ ions.Yihnaz et al. found that bound magnetic polarons are responsible to the RT-FM. Gao et al. reported that the exchange interaction between the donor electron trapped by the singly ionized oxygen vacancy and sur- rounding Mn ions is responsible for the RT-FM. It was also reported that the ferromagnetism of the Mn-doped ZnO nanowires could be controlled by the electric-field or Mn doping levels. This work will investigate the magnetic property of the Mn-doped ZnO nanowires grown by the chemical vapor deposi- tion （CVD） method under the air condition and under the vacuum condition, respectively, and it is found that crystalline quality plays an important role to-wards the room-temperature ferromagnetic behavior of the doped nanowires.
