A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simu...A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.展开更多
A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power ...A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm^2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.展开更多
A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with ...A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.展开更多
基金Project supported by the Major Program of the National Natural Science Foundation of China(No.61434006)the National Natural Science Foundation of China(No.61401457)
文摘A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.
基金Project supported by the National Basic Research Program of China(No.2010CB327502)
文摘A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm^2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.
基金supported by the National Basic Research Program of China(No.2010CB327502)
文摘A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.
