KIO_4和FA/O螯合剂对铜钌CMP的影响

在工作压力为2 psi(1 psi=6 894.76 Pa)、抛光头转速为60 r/min、抛光盘转速为65 r/min、流量为150 mL/min的条件下,对3英寸(1英寸=2.54 cm)的Ru和Cu进行化学机械抛光实验,研究了氧化剂和FA/O螯合剂对Ru化学机械抛光速率以及对Cu和Ru的速率选择比的影响。实验结果表明:KIO4的使用可以大大提高Ru的去除速率,并且当KIO4的浓度为0.02 mol/L,FA/O螯合剂的浓度为3 mL/L时,Cu和Ru之间有很好的速率选择比。此外,通过电化学方法对Cu和Ru表面的腐蚀情况进行了分析研究。结果表明,当KIO4的浓度达到0.02 mol/L时,Cu片和Ru片表面的腐蚀基本不变,并且FA/O螯合剂的加入能略微缓解Cu和Ru之间的电偶腐蚀现象。

掺硼金刚石薄膜电极的制备及电化学特性

通过热丝化学气相沉积(HFCVD)技术,在钽衬底上制备了p型掺硼金刚石(BDD)薄膜电极。利用原子力显微镜(AFM)分析丙酮体积分数对BDD电极的表面形貌和成膜质量的影响,利用循环伏安法(CV)分析BDD电极在不同种类、不同浓度电解液中的电化学特性。结果表明,当丙酮体积分数为1.5%时,金刚石薄膜表现出优异的附着力,并且BDD电极具有稳定的电化学特性。采用制备的BDD电极,在不同浓度的KCl和KH2PO4电解液中使用,得出电势窗口均在3.4 V以上。

Effect of FA/O complexing agents and H_2O_2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry

This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides （such as （RuO4）2- and RUO4- changed into soluble amine salts [R（NH3）4] （RuO4）2） and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.