A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density （3× 10^11 cm^-2 ） were deposited on ultra-thin tunnel oxide la...A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density （3× 10^11 cm^-2 ） were deposited on ultra-thin tunnel oxide layer （- 3 nm） and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanoerystals, which slows the charge loss rate.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2006CB932202, and the National Natural Science Foundation of China under Grant Nos 60721063 and 10974091.
文摘A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density （3× 10^11 cm^-2 ） were deposited on ultra-thin tunnel oxide layer （- 3 nm） and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanoerystals, which slows the charge loss rate.
