Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission （around 7...Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission （around 740 nm） caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy （TEM）, x-ray diffraction （XRD） and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850℃ towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.展开更多
Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended ...Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended state to the localized state with the increase of the site points and the disordered degree of the system. When electric field is exerted, the electrons transfer from one localized state to another one. The conductivity is induced by the electron transfer. The authors derive the formula of electron conductivity and find the electron hops between localized states whose energies are close to each other, whereas localized positions differ from each other greatly. At low temperature the disordered system has the character of the negative differential dependence of resistivity and temperature.展开更多
High fidelity single shot qubit state readout is essential for many quantum information processing protocols. In superconducting quantum circuit, the qubit state is usually determined by detecting the dispersive frequ...High fidelity single shot qubit state readout is essential for many quantum information processing protocols. In superconducting quantum circuit, the qubit state is usually determined by detecting the dispersive frequency shift of a microwave cavity from either transmission or reflection. We demonstrate the use of constructive interference between the transmitted and reflected signal to optimize the qubit state readout, with which we find a better resolved state discrimination and an improved qubit readout fidelity. As a simple and convenient approach, our scheme can be combined with other qubit readout methods based on the discrimination of cavity photon states to further improve the qubit state readout.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50025206, 50472024 and 20151002, and National Basic Research Programme of China under Grant No 2002CB613505. YU Da-Peng is supported by the Cheung Kong Scholar Programme.
文摘Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission （around 740 nm） caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy （TEM）, x-ray diffraction （XRD） and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850℃ towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
文摘Using the negative eigenvalue theory and the infinite order perturbation theory, a new method was developed to solve the eigenvectors of disordered systems. The result shows that eigenvectors change from the extended state to the localized state with the increase of the site points and the disordered degree of the system. When electric field is exerted, the electrons transfer from one localized state to another one. The conductivity is induced by the electron transfer. The authors derive the formula of electron conductivity and find the electron hops between localized states whose energies are close to each other, whereas localized positions differ from each other greatly. At low temperature the disordered system has the character of the negative differential dependence of resistivity and temperature.
基金Supported by the Beijing Academy of Quantum Information Sciencethe Frontier Science Center for Quantum Information of the Ministry of Education of China through the Tsinghua University Initiative Scientific Research Program+3 种基金the National Natural Science Foundation of China (Grant No. 11874235)the National Key Research and Development Program of China (Grant Nos. 2016YFA0301902 and 2020YFA0309500)support from Shuimu Tsinghua Scholar Programthe International Postdoctoral Exchange Fellowship Program。
文摘High fidelity single shot qubit state readout is essential for many quantum information processing protocols. In superconducting quantum circuit, the qubit state is usually determined by detecting the dispersive frequency shift of a microwave cavity from either transmission or reflection. We demonstrate the use of constructive interference between the transmitted and reflected signal to optimize the qubit state readout, with which we find a better resolved state discrimination and an improved qubit readout fidelity. As a simple and convenient approach, our scheme can be combined with other qubit readout methods based on the discrimination of cavity photon states to further improve the qubit state readout.
