电子辐照电介质样品带电泄放弛豫特性研究

电子照射电介质材料的带电效应对介质微波部件的微放电现象有着重要影响.本文采用数值模拟的方法研究电子照射介质样品带电后的弛豫泄放过程.对入射电子与样品的相互作用考虑了弹性和非弹性碰撞过程,采用蒙特卡罗方法进行数值模拟;对沉积在样品内部的电荷泄漏过程则采用考虑电荷迁移、扩散以及俘获等过程的时域有限差分法进行处理.模拟了介质样品在带电泄放弛豫过程中的内部电荷和电位分布以及弛豫暂态特性,并分析了包括样品厚度、电子迁移率以及俘获密度在内的样品参数对泄放弛豫过程的影响.计算结果表明:在介质样品带电泄放的弛豫过程中,样品内部的总电荷量和表面电位逐渐减弱到一个与俘获密度直接相关的终态值;迁移率的增大会类线性比例地减少泄放时间常数,电荷泄放量随着样品厚度的增加呈现先增后减的趋势,而泄放量比随俘获密度增大从1近指数关系地减小为零.

铝阳极氧化的多孔结构抑制二次电子发射的研究

针对空间大功率微波部件中的二次电子倍增效应影响微波部件性能的问题,基于铝阳极氧化产生大深宽比、高孔隙率均匀纳米级多孔结构的特性,结合蒸发镀银技术,提出一种有效降低表面二次电子发射系数的方法.结果表明,相比于未阳极氧化的铝样片,在不清洗样片的情况下(实际的样片表面都会存在吸附或沾污),测试得到二次电子发射系数曲线的第一能量交叉点E1从45 eV增加到77 eV,最大二次电子发射系数SEY_(max)从2.68减小到1.52;在清洗样片的情况下(清洗是为了去除吸附或沾污,获得理想的表面),测试得到第一能量交叉点E_1从40 eV增加到211 eV,最大二次电子发射系数SEY_(max)从2.55减小到1.36.为了验证本文所提方法对抑制空间大功率微波部件二次电子倍增效应的有效性,分别将获得的未阳极氧化和阳极氧化后的二次电子发射系数数据用于一个X频段阻抗变换器设计中,结果显示,使用本文所提方法后,阻抗变换器的微放电阈值从7000 W提高到125000 W.本文研究的方法不仅对解决空间大功率微波部件的微放电问题有指导意义,而且对真空电子器件、加速器等领域的研究也具有重要参考价值.

电子辐照介质材料二次电子发射系数与能谱测量数据库

电子辐照电介质材料的二次电子发射特性是影响各类真空电子器件与设备性能的重要参数,本文对电子束辐照下二十余种常用的典型介质材料的二次电子发射特性进行了实验测量研究。采用收集极负偏压法测量二次电子发射系数(SEY),通过给二次电子收集极加载不同的偏压来引导二次电子的运动,实现对积累电荷的中和,实验获得了介质材料的SEY随着入射电子能量变化的曲线,以及SEY最大值σ_(max)、第一、第二临界能量E1、E2等特征参数。采用高分辨率筒镜型电子能谱仪测量了电子束脉冲序列辐照介质材料的二次电子能谱,得到不同入射电子能量条件下的二次电子能谱分布曲线,以及真二次电子峰半高宽参数。通过实验测量建立了常用介质材料二次电子发射特性数据库,该结果将为介质材料二次电子发射的各类应用提供重要参考。

大功率铁磁性微波部件微放电演变机理与抑制

铁氧体环行器是承载航天器微波系统大功率的关键器件,其大功率微放电效应是影响航天器在轨安全、可靠运行的瓶颈问题。从影响微放电效应的关键因素--二次电子发射特性出发,提出铁磁性微波部件微放电效应物理演变模型,揭示了铁磁性微波部件内部初始自由电子与二次电子运动的空间规律;通过改变铁磁性微波部件表面二次电子发射特性,揭示了铁磁性微波部件抗微放电优化设计的物理原理。在S频段铁氧体环行器中验证了基于表面二次电子发射特性的微放电效应抑制,将器件的微放电阈值从380 W提高至3400 W以上,提升效率大于900%。

采用收拢式表面的二次电子发射抑制策略

针对二次电子谐振倍增引起的微放电效应导致微波部件传输性能降低的现象,提出了一种能显著抑制二次电子的收拢式微陷阱表面结构。首先,通过分类处理弹性背散射、非弹性背散射以及真二次电子出射概率得到平整表面的总二次电子出射特性;然后,采用粒子模拟的方法跟踪二次电子在收拢式陷阱结构内的级联再入射过程,获得收拢式陷阱结构对二次电子的抑制特性,从而得到收拢式表面结构对不同类型出射电子的抑制效果和二次电子能谱变化趋势,以及表面结构参数对二次电子发射特性和微放电品质因子的影响规律。仿真结果表明:收拢式表面使得二次电子产额在各个能量段整体下降,对应的二次电子能谱呈现更集中的趋势。收拢式结构中的矩形宽度对二次电子的影响呈先减小后增加趋势,而矩形深度能呈线性地提高微放电的品质因子。这种收拢式结构的椭圆水平轴长在最优的情况下比相同孔隙率和深宽比矩形陷阱结构对二次电子发射的抑制效果提高21.2%,同时使微放电品质因子提升24.97%。

介质带电平衡模式的二次电子发射暂态特性

针对空间微放电效应中介质材料的带电状态对二次电子发射的复杂影响,文章采用数值模拟的方法,首次从带电平衡模式的角度研究了介质材料受电子照射后的二次电子动态发射特性。数值模拟模型结合了蒙特卡罗方法和时域有限差分方法,考虑了弹性和非弹性碰撞的电子散射过程,以及迁移、扩散和捕获等作用的电荷输运过程。通过对带电状态平衡模式的划分,研究了介质二次电子发射及带电状态的暂态变化、微观分布、稳态特性。研究结果表明:介质表面的带电过程可以根据介质表面电流的变化程度分为二次电子平衡模式、泄漏电流平衡模式及共同模式;二次电子平衡模式下样品呈现表面带电状态,而泄漏电流模式下呈现深层带电状态。泄漏电流平衡模式转向二次电子平衡模式过程中,稳态二次电子产额增加,表面负电位增强;总电荷量和平衡时间常数由于平衡模式的改变呈现相反的变化趋势。研究方法和结果有助于介质二次电子的机理研究和微放电效应的工程抑制技术。

电子辐照聚合物带电特性多参数共同作用的数值模拟

电子辐照聚合物样品的带电特性是扫描电子显微镜成像、电子束探针微分析以及空间器件辐照效应等领域的一个重要研究课题.通过建立基于蒙特卡罗方法的电子散射和时域有限差分法的电子输运的数值模型,并采用高效的多线程并行计算,模拟了电子非透射辐照聚合物样品的带电特性,得到了带电稳态下的样品底部泄漏电流密度、表面负电位以及样品总电荷密度等带电特征量受入射电子能量、入射电流密度、样品材料的电子迁移率、样品厚度等相关参数共同作用的影响.结果表明,一个参数的变化使表面负电位增强时,其他参数对负电位的影响将增强.样品的带电稳态特征量在同一个电流平衡的模式下受参数影响的变化是单调的.当电流平衡模式发生变化时,如在入射电子能量较低的条件下,样品内部的总电荷量会随着样品厚度的增大而先增加后减小,出现局部极大值.样品底部的泄漏电流密度随着入射电流密度的增大而近线性成比例地增大.研究结果对于揭示电子辐照聚合物的带电规律及微观机理、预测不同条件下的样品带电状态具有重要科学意义.

空间电子辐照介质材料带电效应研究进展

针对空间电子辐照对介质材料所产生的带电效应对在轨航天器的服役性能带来了巨大威胁,为深入理解和探究空间电子辐照带电效应的特性和规律,重点介绍了在电子辐照环境下,介质材料的表面电位特性、材料的总带电电荷量以及电子辐照介质内部的实时电荷分布以及动态演变特性,并进一步阐述了带电状态对二次电子发射的反馈动态影响研究。此外,概括了近年来国内外对电子辐照带电的理论数值模拟方法及发展情况。

二次电子发射研究进展及其空间应用

由二次电子发射引发的微放电效应是严重影响星载微波部件性能和安全的瓶颈问题之一。针对星载微波部件微放电的研究及应用需求,对国内外二次电子发射的研究进展进行了系统梳理,介绍了二次电子发射模型、仿真分析方法、测试装置及实验研究,以及在微波射频器件及航天器充放电方面的应用研究,总结了主要的研究结论。在此基础上提出了发展建议,以期对国内的二次电子发射及微放电研究的推进提供参考。

基于光子晶体的太赫兹环行器设计及其内带电效应研究

对于卫星亚毫米波甚至太赫兹收发通信系统而言,由铁磁性器件构成的环行器和隔离器是实现功率隔离、保护发射通道不受反射功率影响的关键元器件。文章基于周期性光子晶体阵列,提出一种具有良好平面集成性的新型太赫兹环行器构型;并针对星载环境的电子辐照问题,采用典型能量电子辐照分析光子晶体Si的内带电特性、环行器整体电位以及局部电场分布特性。仿真结果表明,该环行器中心频率为205 GHz时,可在3 GHz带宽内实现电磁波定向不可逆传输的电性能,带内插入损耗小于0.5 dB,且受电子辐照带电的影响较小,在卫星高集成高密度太赫兹系统中具有较大的应用潜力。

Electron beam irradiation on novel coronavirus(COVID-19):A Monte-Carlo simulation

The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world.As a rapid and reliable killing COVID-19 method in industry,electron beam irradiation can interact with virus molecules and destroy their activity.With the unexpected appearance and quickly spreading of the virus,it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19.In this study,we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient,and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons.The characteristics of irradiation damage on COVID-19,atoms’ionizations and electron energy losses are calculated and analyzed with regions.We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage.It is found that under the major protecting of an envelope protein layer,the inner RNA suffers the minimal damage.The damage for a^100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity,for COVID-19,the irradiation electron energy of the strongest energy loss damage is 2 keV.

Characteristics of charge and discharge of PMMA samples due to electron irradiation

In this study, using a comprehensive numerical simulation of charge and discharge processes, we investigate the formation and evolution of negative charge and discharge characteristics of a grounded PMMA film irradiated by a non- focused electron beam. Electron scattering and transport processes in the sample are simulated with the Monte Carlo and the finite-different time-domain （FDTD） methods, respectively. The properties of charge and discharge processes are presented by the evolution of internal currents, charge quantity, surface potential, and discharge time. Internal charge accumulation in the sample may reach saturation by primary electron （PE） irradiation providing the charge duration is enough. Internal free electrons will run off to the ground in the form of leakage current due to charge diffusion and drift during the discharge process after irradiation, while trapped electrons remain. The negative surface potential determined by the charging quantity decreases to its saturation in the charge process, and then increases in the discharge process. A larger thickness of the PMMA film will result in greater charge amount and surface potential in charge saturation and in final discharge state, while the electron mobility of the material has little effects on the final discharge state. Moreover, discharge time is less for smaller thickness or larger electron mobility. The presented results can be helpful for estimating and weakening the charging of insulating samples especially under the intermittent electron beam irradiation in related surface analysis or measurement.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation： a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation. The effects of charging on the dielectric constant will influence the charging dynamic in return. In this paper, we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation. The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model, respectively. Internal charge drift due to E-field, density gradient caused diffusion, charges trap by material defect, free electron and hole neutralization, and variation in the internal dielectric constant are considered when simulating the transport process. The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation. As a function of material nonlinear susceptibility and primary energy, the dynamics of charging states and dielectric constants are then presented in the charging process. It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time. Material with a larger nonlinear susceptibility corresponds a faster charging enhancement. In addition, the effective dielectric constant and the surface potential have a linear relationship in the charging balance. Nevertheless, with shrinking charging affect range, the situation with a higher energy primary electron comes with less dielectric constant variation. The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Characteristics of secondary electron emission from few layer graphene on silicon(111) surface

As a typical two-dimensional(2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of secondary electron emission suppression remain controversial. Since traditional models rely on the data of experimental bulk properties which are scarcely appropriate to the 2D coating situation, this paper presents the first-principles-based numerical calculations of the electron interaction and emission process for monolayer and multilayer graphene on silicon(111) substrate. By using the anisotropic energy loss for the coating graphene, the electron transport process can be described more realistically. The real physical electron interactions, including the elastic scattering of electron-nucleus, inelastic scattering of the electron-extranuclear electron, and electron-phonon effect, are considered and calculated by using the Monte Carlo method. The energy level transition theory-based first-principles method and the full Penn algorithm are used to calculate the energy loss function during the inelastic scattering. Variations of the energy loss function and interface electron density differences for 1 to 4 layer graphene coating Go Si are calculated, and their inner electron distributions and secondary electron emissions are analyzed. Simulation results demonstrate that the dominant factor of the inhibiting of secondary electron yield(SEY) of Go Si is to induce the deeper electrons in the internal scattering process. In contrast, a low surface potential barrier due to the positive deviation of electron density difference at monolayer Go Si interface in turn weakens the suppression of secondary electron emission of the graphene layer. Only when the graphene layer number is 3, does the contribution of surface work function to the secondary electron emission suppression appear to be slightly positive.

A synthetic semi-empirical physical model of secondary electron yield of metals under E-beam irradiation

Calculations of secondary electron yield（SEY） by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface contamination states of real sample result in notable difference between simulations and experiments. In this paper, in order to calculate SEY of metal under complicated surface state accurately, we propose a synthetic semi-empirical physical model. The processes of excitation of internal secondary electron（SE） and movement toward surface can be simulated using this model.This model also takes into account the influences of incident angle and backscattering electrons as well as the surface gas contamination. In order to describe internal electronic states accurately, the penetration coefficient of incident electron is described as a function of material atom number. Directions of internal electrons are set to be uniform in each angle. The distribution of internal SEs is proposed by considering both the integration convergence and the cascade scattering process.In addition, according to the experiment data, relationship among desorption gas quantities, sample ultimate temperature and SEY is established. Comparing with experiment results, this synthetic semi-empirical physical model can describe the SEY of metal better than former formulas, especially in the aspect of surface contaminated states. The proposed synthetic semi-empirical physical model and presented results in this paper can be helpful for further studying SE emission, and offer an available method for estimating and taking advantage of SE emission accurately.

基于表面构型的二次电子发射及微放电特性研究

针对航天有效载荷微波部件频发的微放电现象,采用微陷阱表面构型来抑制微波材料表面的二次电子发射,从而达到微放电抑制效果。通过硅基材料的表面刻蚀和金属Ag的表面溅射获得规整的金属表面微陷阱结构,将表面处理过的金属样品在二次电子发射平台的电子枪20~4 000 e V照射下,采用电流法获得金属微陷阱表面的二次电子产额曲线及抑制特性。此外,通过将表面出射的二次电子分为弹性背散射电子、非弹性背散射电子和本征二次电子,并跟踪电子在陷阱结构内的级联再入射过程,建立表面圆柱孔和矩形槽微陷阱表面的二次电子发射数值模型,模拟结果与测试结果能很好吻合。采用数值模拟的方法构造不同深宽比的微陷阱结构表面,最大二次电子产额、第一交叉能量以及微放电品质因子的变化规律。研究结果表明:陷阱结构的侧壁遮挡效果能有效抑制二次电子从表面发射,并且深宽比越大的表面陷阱结构抑制效果更强,而在相同深宽比情况下,圆柱孔陷阱结构比矩形槽陷阱结构对二次电子的抑制效果更好,此外,陷阱结构的深宽比不仅能使得最大二次电子产额减小、第一交叉能量增大,还会近线性地增大材料的微放电品质因子F。