The growth of γ-In_(2)Se_(3) thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In_(2)Se_(3) is achieved at a relatively low growth temperature. An ultrathin β-In_(2)Se_(3) buffer layer i...The growth of γ-In_(2)Se_(3) thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In_(2)Se_(3) is achieved at a relatively low growth temperature. An ultrathin β-In_(2)Se_(3) buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In_(2)Se_(3) at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In_(2)Se_(3) thin films.展开更多
Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are chara...Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 phases.The pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-In2Se3.It is suggeted that the observedγ-to-βphase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium.展开更多
基金Project supported by the National Key R&D Program of China(Grant Nos.2018YFA0306102 and 2018YFA0306703)the National Natural Science Foundation of China(Grant No.61474014)+1 种基金the Sichuan Science and Technology Program,China(Grant No.2019YJ0202)the University Program for Elaborate Courses of Postgraduates。
文摘The growth of γ-In_(2)Se_(3) thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In_(2)Se_(3) is achieved at a relatively low growth temperature. An ultrathin β-In_(2)Se_(3) buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In_(2)Se_(3) at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In_(2)Se_(3) thin films.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0306102 and 2018YFA0306703)the National Natural Science Foundation of China(Grant Nos.61474014 and U1601208)the Sichuan Science and Technology Program,China(Grant Nos.2019YJ0202 and 20GJHZ0229).
文摘Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111)substrates are studied.The In2Se3 thin films grown below theβ-to-αphase transition temperature(453 K)are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 phases.The pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-In2Se3.It is suggeted that the observedγ-to-βphase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium.
