为了改善由于像素间TFT特性不同导致的有源矩阵有机发光显示（AM OLED）亮度不均匀现象,研究了基于2T1C像素电路的边寻址边显示（Address While Display,AWD）数字驱动方法,该方法采用等权重的11子场累积式发光方式,并用有序抖动方法实...为了改善由于像素间TFT特性不同导致的有源矩阵有机发光显示（AM OLED）亮度不均匀现象,研究了基于2T1C像素电路的边寻址边显示（Address While Display,AWD）数字驱动方法,该方法采用等权重的11子场累积式发光方式,并用有序抖动方法实现256灰度级。通过在14cm（5.5in）的AM OLED模组上对该方法的实现和验证,结果表明,数字驱动方法在0~255灰度区间的不均匀性最大为28%,对灰度变化不敏感,而模拟驱动的不均匀性随灰度级的降低显著增大,最大为133%。数字驱动显示图像的均匀性显著优于模拟驱动,且采用基本的2T1C像素电路即可实现,降低了对像素电路和制备成本的要求。展开更多
The regulation of memory effect that the residual charges generated during and after discharge act on the initiation and development of subsequent discharge is explored by adjusting the pulse parameters,which have an ...The regulation of memory effect that the residual charges generated during and after discharge act on the initiation and development of subsequent discharge is explored by adjusting the pulse parameters,which have an influence on the discharge characteristics.The memory effect is quantified by the measurement of‘wall voltage’through a series of reference capacitors.The influences of memory effect on the discharge properties corresponding to rising/falling time50–500 ns,pulse width 0.5–1.5μs,and frequency 200–600 Hz are analyzed.It is found that the‘wall voltage’increases from 1.4 kV to 2.4 kV with rising/falling time from 50 ns to 500 ns,it varies in the range of 0.18 kV with frequency of 200–600 Hz,and 0.17 k V with pulse width of 0.5–1.5μs.The propagation velocity of wavelike ionization under the negative pulse slows down from 2184 km s-1to 1026 km s-1 as the rising/falling time increases from 50 ns to 500 ns due to the weakening of the electric field by the surface memory effect.More intense and uniform emission can be achieved through faster rising/falling time and higher frequency based on the volume memory effect,while pulse width has less influence on the emission uniformity.Furthermore,similar laws are obtained for spectral and discharge intensity.Therefore,the memory effect is most effectively regulated by rising/falling time,and the discharge properties are affected by the surface and volume memory effect.展开更多
文摘为了改善由于像素间TFT特性不同导致的有源矩阵有机发光显示（AM OLED）亮度不均匀现象,研究了基于2T1C像素电路的边寻址边显示（Address While Display,AWD）数字驱动方法,该方法采用等权重的11子场累积式发光方式,并用有序抖动方法实现256灰度级。通过在14cm（5.5in）的AM OLED模组上对该方法的实现和验证,结果表明,数字驱动方法在0~255灰度区间的不均匀性最大为28%,对灰度变化不敏感,而模拟驱动的不均匀性随灰度级的降低显著增大,最大为133%。数字驱动显示图像的均匀性显著优于模拟驱动,且采用基本的2T1C像素电路即可实现,降低了对像素电路和制备成本的要求。
基金provided by National Natural Science Foundation of China(Nos.51807156 and 61771382)Projects of International Cooperation and Exchanges Shaanxi Province(No.2018KW034)+1 种基金China Postdoctoral Science Foundation(No.2017M623174)Central University Basic Scientific Research Operating Expenses(No.xpt012019041)。
文摘The regulation of memory effect that the residual charges generated during and after discharge act on the initiation and development of subsequent discharge is explored by adjusting the pulse parameters,which have an influence on the discharge characteristics.The memory effect is quantified by the measurement of‘wall voltage’through a series of reference capacitors.The influences of memory effect on the discharge properties corresponding to rising/falling time50–500 ns,pulse width 0.5–1.5μs,and frequency 200–600 Hz are analyzed.It is found that the‘wall voltage’increases from 1.4 kV to 2.4 kV with rising/falling time from 50 ns to 500 ns,it varies in the range of 0.18 kV with frequency of 200–600 Hz,and 0.17 k V with pulse width of 0.5–1.5μs.The propagation velocity of wavelike ionization under the negative pulse slows down from 2184 km s-1to 1026 km s-1 as the rising/falling time increases from 50 ns to 500 ns due to the weakening of the electric field by the surface memory effect.More intense and uniform emission can be achieved through faster rising/falling time and higher frequency based on the volume memory effect,while pulse width has less influence on the emission uniformity.Furthermore,similar laws are obtained for spectral and discharge intensity.Therefore,the memory effect is most effectively regulated by rising/falling time,and the discharge properties are affected by the surface and volume memory effect.
