Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals ...Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.展开更多
ZnO Bi2O3-based varistor ceramics doped with Eu2O3in a range from 0 to 0.4%were obtained by high-energy ball milling and fired at 900 1 000°C for 2 h.XRD and SEM were applied to determine the phases and microstru...ZnO Bi2O3-based varistor ceramics doped with Eu2O3in a range from 0 to 0.4%were obtained by high-energy ball milling and fired at 900 1 000°C for 2 h.XRD and SEM were applied to determine the phases and microstructure of the varistor ceramics.A DC parameter instrument was applied to investigate the electronic properties and V–I characteristics.The XRD analysis of Eu2O3-doped ZnO Bi2O3-based varistor ceramics shows that the ZnO,Eu-containing Bi-rich,Zn7Sb2O12-type spinel and Zn2Bi3Sb3O14-type which is the pyrochlore phase are present.With increasing Eu2O3content,the average size of ZnO grain firstly decreases and then increases.The grain boundary defect model was particularly used to explain the excellent nonlinearity of ZnO Bi2O3-based varistor ceramics with the addition of 0.1%Eu2O3and sintered at 950°C.展开更多
基金Projects (BK2011243, BK2012156) supported by the Natural Science Foundation of Jiangsu Province, ChinaProject (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment, China+4 种基金Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing, ChinaProject (KFJJ201105) supported by the Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices, ChinaProject (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject (CJ20120058) supported by the Application Program for Basic Research of Changzhou, ChinaProject (11JDG084) supported by the Research Foundation of Jiangsu University, China
基金Project(20123227120021)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of ChinaProject(BK2012156)supported by the Natural Science Foundation of Jiangsu Province,China+3 种基金Project(KFJJ201105)supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(CJ20125001)supported by the Application Program for Basic Research of Changzhou,ChinaProject(13KJB430006)supported by the Universities Natural Science Research project of Jiangsu Province,ChinaProject supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
基金Projects(BK2011243,BK2012156) supported by the Natural Science Foundation of Jiangsu Province,ChinaProject(20123227120021) supported by the Specialized Research Fund for the Doctoral Program of Higher Education,China+3 种基金Project(KFJJ201105) supported by the Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject(13KJB430006) supported by the Application Program for Basic Research of Changzhou,ChinaProject supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Project,China
文摘ZnO Bi2O3-based varistor ceramics doped with Eu2O3in a range from 0 to 0.4%were obtained by high-energy ball milling and fired at 900 1 000°C for 2 h.XRD and SEM were applied to determine the phases and microstructure of the varistor ceramics.A DC parameter instrument was applied to investigate the electronic properties and V–I characteristics.The XRD analysis of Eu2O3-doped ZnO Bi2O3-based varistor ceramics shows that the ZnO,Eu-containing Bi-rich,Zn7Sb2O12-type spinel and Zn2Bi3Sb3O14-type which is the pyrochlore phase are present.With increasing Eu2O3content,the average size of ZnO grain firstly decreases and then increases.The grain boundary defect model was particularly used to explain the excellent nonlinearity of ZnO Bi2O3-based varistor ceramics with the addition of 0.1%Eu2O3and sintered at 950°C.
