Microstructure evolution in the surface layer of hydrogenated amorphous silicon(a-Si:H)film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fou...Microstructure evolution in the surface layer of hydrogenated amorphous silicon(a-Si:H)film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy.Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction.High-pressure H_(2) in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film,which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si–Si bonds.展开更多
Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolu...Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.展开更多
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstr...Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.展开更多
A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton(SPP)i...A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton(SPP)interference mask and multi-layer film superlens.Using the amplification effect of superlens on evanescent wave,the near field SPP interference pattern is imaged to the far field,and then is exposed on photo resist(PR).The simulation results based on finite difference time domain(FDTD)method show that the full width at half maximum(FWHM)of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure.Meanwhile,the focal depth is 150 nm for negative PR and 60 nm for positive PR,which is much greater than that in usual SPP photolithography.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61106011the Anhui Provincial Natural Science Foundation under Grant No 10040606Q31.
文摘Microstructure evolution in the surface layer of hydrogenated amorphous silicon(a-Si:H)film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy.Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction.High-pressure H_(2) in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film,which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si–Si bonds.
文摘Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.
基金Project supported by the National Natural Science Foundation of China(No.60990314)the State Key Development Program for Basic Research of China(No.2007CB936300)
文摘Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.
基金the Open Fund of State Key Laboratory of Optical Technologies for Microfabrication,Institute of Optics and Electronics,Chinese Academy of Sciences(No.KFS-02)
文摘A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations.The basic structure consists of surface plasmon polariton(SPP)interference mask and multi-layer film superlens.Using the amplification effect of superlens on evanescent wave,the near field SPP interference pattern is imaged to the far field,and then is exposed on photo resist(PR).The simulation results based on finite difference time domain(FDTD)method show that the full width at half maximum(FWHM)of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure.Meanwhile,the focal depth is 150 nm for negative PR and 60 nm for positive PR,which is much greater than that in usual SPP photolithography.
