We propose and experimentally demonstrate a broadband 1 × 3 adiabatic splitter based on the silicon-on-insulator technology, with simultaneous tapering of velocity and coupling. The designed structure becomes sim...We propose and experimentally demonstrate a broadband 1 × 3 adiabatic splitter based on the silicon-on-insulator technology, with simultaneous tapering of velocity and coupling. The designed structure becomes simulated transmission uniformity of three outputs better than 0.5dB in a broadband of 250nm, and a large simulated fabrication tolerance is obtained. A manufactured splitter whose parameters greatly diverge from the design acquires a measured result of the worst splitting ratio better than 1.5dB as well as an excess loss lower than 0.8 dB in a large wavelength range of 80nm. A post-simulation based on the tested splitter obtains a result that meets the actual transmission well.展开更多
We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu-...We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.展开更多
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2015AA016904and 2013AA014402the National Basic Research Program of China under Grant No 2011CB301701the National Natural Science Foundation of China under Grant No 61275065
文摘We propose and experimentally demonstrate a broadband 1 × 3 adiabatic splitter based on the silicon-on-insulator technology, with simultaneous tapering of velocity and coupling. The designed structure becomes simulated transmission uniformity of three outputs better than 0.5dB in a broadband of 250nm, and a large simulated fabrication tolerance is obtained. A manufactured splitter whose parameters greatly diverge from the design acquires a measured result of the worst splitting ratio better than 1.5dB as well as an excess loss lower than 0.8 dB in a large wavelength range of 80nm. A post-simulation based on the tested splitter obtains a result that meets the actual transmission well.
基金supported by the National Basic Research Program of China(Grant No.2011CB301701)the National High Technology Research and Development Program of China(Grant Nos.2013AA014402,2015AA016904,and 2012AA012202)the National Natural Science Foundation of China(Grant Nos.61107048 and 61275065)
文摘We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.
