We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balan...We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.展开更多
基金Supported by the National Key Research and Development Program of China(2017YFB0405300,2016YFB0402400)National Natural Science Foundation of China(61605232,61675225,61775228)the Shanghai Rising-Star Program(17QA1404900)
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402400the National Basic Research Program of China under Grant No 2014CB643900+1 种基金the National Natural Science Foundation of China under Grant Nos 61775228,61605232,61675225 and 61334004the Shanghai Rising-Star Program under Grant No 17QA1404900
文摘We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.
