Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application poten...Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.展开更多
Two-dimensional(2D)moirématerials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties.Although great progress has been achieved,the inability...Two-dimensional(2D)moirématerials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties.Although great progress has been achieved,the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics.Here,we demonstrated an atomic force microscope(AFM)tip manipulation method to control the interlayer twist angle of epitaxial MoS_(2)/graphene heterostructure with an ultra-high accuracy better than 0.1°.Furthermore,conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moirépattern wavelength,phonons and excitons.Our work provides a technique to precisely control the twist angle of 2D moirématerials,enabling the possibility to establish the phase diagrams of moiréphysics with twist angle.展开更多
基金Project supported by the National Key R&D Program,China(Grant No.2016YFA0300904)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH004)+1 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant Nos.XDPB06 and XDB07010100)the National Natural Science Foundation of China(Grant Nos.61734001 and 51572289)
文摘Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.
基金Project supported by the Natioanl Natural Science Foundation of China(Grant Nos.62122084,12074412,61888102,and 11834017)。
文摘Two-dimensional(2D)moirématerials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties.Although great progress has been achieved,the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics.Here,we demonstrated an atomic force microscope(AFM)tip manipulation method to control the interlayer twist angle of epitaxial MoS_(2)/graphene heterostructure with an ultra-high accuracy better than 0.1°.Furthermore,conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moirépattern wavelength,phonons and excitons.Our work provides a technique to precisely control the twist angle of 2D moirématerials,enabling the possibility to establish the phase diagrams of moiréphysics with twist angle.
